Correction method and correction system for design data or mask data, validation method and validation system for design data or mask data, yield estimation method for semiconductor integrated circuit, method for improving design rule, mask production method, and semiconductor integrated circuit production method

ABSTRACT

A validation/correction method is provided for design data or mask data by which a pattern which becomes critical in a process is extracted in advance so that the pattern can be corrected. Consequently, the process spec is achieved in a short period of time after OPC or process proximity effect correction (PPC).

This Nonprovisional application claims priority under 35 U.S.C. §119(a)on patent application Ser. No. 2006/179489 filed in Japan on Jun. 29,2006, and No. 2007/161906 (filed in Japan on Jun. 19, 2007, the entirecontents of which are hereby incorporated by reference.

FIELD OF THE TECHNOLOGY

The technology presented herein relates to a validation method for maskpattern data or design (layout data) used for lithography processes formanufacturing circuit patterns of ICs (integrated circuit), LSIs(large-scale integrated circuit), or liquid crystal displays etc., andto a correction method for mask pattern data or design data using thesame, a yield estimation method for semiconductor integrated circuits(ICs or LSIs), and a method of improving design rule. The presenttechnology also relates to a validation system for mask pattern data ordesign data and a correction system for mask pattern data using thesame. The present technology further relates to a mask production methodusing the correction method for mask pattern data or design data, and asemiconductor integrated circuit production method using the mask. Notethat, the lithography process designates a process of exposing a resistto radiation (visible light, ultraviolet light, X-ray, electron beametc.) using a mask and developing the resist having been exposed,followed by etching of the circuit material using the developed resistas a mask. Apart from the lithography for carrying out visible lightexposure of a visible light resist using a visible light mask, X-raylithography for carrying out X-ray exposure; EUV lithography forcarrying out soft (extreme) ultraviolet (EUV) exposure using a mask ofidentical size or in a reduction way; electron beam lithography forcarrying out electron beam exposure; electron beam projection exposurelithography (EPL) not in a direct drawing but using a mask or cellprojection is also applicable.

BACKGROUND

In recent years, integration of LSI has become more intensive, and theelement sizes are being vastly reduced. In a lithography processdirectly related to element microfabrication, a photoresist is formed ona processing layer (semiconductor layer or a metal layer), and thephotoresist is exposed via a mask followed by development, so that thephotomask pattern is transferred onto the photoresist. The layer is thensubjected to microfabrication through etching using as an etching maskthe photoresist on which the pattern is transferred, before finally thephotoresist is removed. In a recent lithography process for elementmicrofabrication, the exposure wavelength is greater than the size oftransfer pattern (photomask), and therefore there is a problem offaultiness of the pattern transfer linearity (accordance of the patternbefore transfer and the pattern after transfer). This is called anoptical proximity effect. The optical proximity effect is a phenomenonin which the 90° corner (corner section) rounds and the line end on thepattern transfer decreases due to diffraction of light caused by theexposure wavelength greater than the transfer pattern. Further,similarly, the optical proximity effect appears as a phenomenon in whichthe line width, which is supposed to be the same, varies depending onthe density.

The optical proximity effect is, as it is obvious, mainly caused by aproximity effect of light; however, it is also affected by the resistprocess (pre-exposure bake, post-exposure bake (PEB), development) or bythe underlayer (shape, structure, material etc. of the underlayer). Theoptical proximity effect may make the product circuit pattern to falloutside the spec (design size).

To prevent unwanted effects of optical proximity effect upon theexposure (may be called “photo”, hereinafter), a mask used for exposureis generally subjected to a correction process in advance so that thepredicted shifting (displacement) amount due to optical proximity effectis modified. This correction is called optical proximity effectcorrection (may be referred to as “OPC” hereinafter).

In recent years, a phenomenon called etching shift, which occurs in theOPC due to proximity effect of pattern in the etching process afterexposure, has become a problem. Unlike the optical proximity effect, inthe proximity effect in the etching process, the reaction of the circuitmaterial to the etching changes depending on the space to the proximalpattern or the pattern density in the neighborhood. To accuratelyanalyze the reaction, it is necessary to analyze radical reaction ofetching including the shape of the neighborhood portion. A recentgeneral practical method of finding the etching shift is not calculationof an accurate reaction formula, but a fitting calculation using anempiric formula (or a rule) on the basis of the space to the proximalpattern or the pattern density in the neighborhood. A correction of theetching proximity effect based on this fitting calculation (or a rule)is called an etching proximity effect correction (Etching-PC,hereinafter). The Process Proximity Effect Correction; (may be referredto as “PPC” hereinafter) including a proximity effect correction(Etching-PC) to the etching shift is now considered more important.

With the recent complication of process technologies, the circuitpattern set by the designer and the mask pattern used in the exposureprocess greatly differs. This prevents easy estimation of the shape ofthe resist pattern formed on a wafer based on the mask pattern.Therefore, it is necessary to check whether the mask pattern isappropriate (whether the mask pattern is capable of forming the desiredcircuit pattern) using a simulator (of lithography or etching).

For example, Patent Document 1 (Japanese Unexamined Patent PublicationTokukai 2005-121943) discloses a method of extracting the differencebetween (i) anticipated value pattern data generated through estimationof the photomask pattern at the time of exposure transfer onto a waferand modification of the CAD pattern data, and (ii) the pattern dataresulted from the simulation denoting a result of light intensitysimulation to the CAD pattern data, and determines whether thedifference is not more than a predetermined allowable value. In thisway, the reasonability of the pattern image on a wafer is examined. Notethat, the OPC data examination tool using this technology has beencommercially available via some EDA (Electronic Design Automation)vendors.

Further, a non-patent Document 1 (J. Kim, L. Wang, et al. “Model-BasedFull-chip Validation for 65 nm Lithography Process Development”, SPIEBACUS Symposium, Yokohama, Vol. 5853-42, pp. 599-606, 2005/April)discloses a method of examining the reasonability of the pattern imageon a wafer through estimation of the shape of photomask pattern at thetime of transfer onto a wafer through lithography simulation, extractingthe difference between the target CAD pattern data and the simulationresult, and determining whether the difference is not more than apredetermined allowable value. The OPC data examination tool using thistechnology has been commercially available via some EDA vendors. Thenon-patent Document 2 (A. Sezginer, F. X. Zach, et al.“Process-window-aware-RET and OPC”, SPIE Symposium, San Jose, Vol. 6156,No. 615613, recently completed volumes, 2006) is a specific example ofPPC of this technology.

With reference to FIG. 4( a) and FIG. 4( b), the following explains aconcrete example of a method of examining the reasonability of the OPCphotomask (the photomask created by OPC) for forming a circuit patternof a memory cell (SRAM), i.e., for examining whether the mask pattern iscapable of forming a desired circuit pattern, by way of lithographysimulation. First, the exposure pattern on a wafer is found bylithography simulation based on the OPC photomask pattern data of FIG.4( a). FIG. 4( a) shows the exposure pattern on the wafer as asimulation result. Next, the distance between the edges of the exposurepattern on the wafer is checked and the two edges (in this example, seethe part indicated by the broken line of FIG. 4( a)) with a distance(about 110 nm) significantly smaller than the designed value (170 nm) isdetermined as a part of short-circuit. The OPC photomask is modified toincrease the distance between the edges determined as a part ofshort-circuit of the exposure pattern on the wafer to 166 nm. As aresult, the distance between the edges determined as a part ofshort-circuit of the OPC photomask is increased from 110 nm to 118 nm.FIG. 4( b) shows an exposure pattern on the wafer (shown as a simulationresult in the figure) found by the lithography simulation based on themodified OPC photomask, and the data thereof.

Examples of the method of producing photomask patterns using the OPC aredisclosed in many Patent Documents, such as the Patent Document 2(Japanese Unexamined Patent Publication Tokukai 2005-134520.

The method disclosed in Patent Document 2 first carries out proximityeffect correction with respect to the design pattern data (photomaskpattern data), and then extracts a part where the process margindecreases using the light intensity simulation (light intensitycalculation under best focus, optimal exposure state, out of focus,improper exposure amount). In this way, the pattern is corrected to keepthe margin of the part where the extract process margin decreases.

On the other hand, the Patent Document 3 (Japanese Unexamined PatentPublication Tokukai 2005-181636 prepares a desired pattern and a maskpattern corresponding to the desired pattern, and carries out proximityeffect correction with respect to the mask pattern, and then setsevaluation points to the edges of the desired pattern, and calculatesposition errors from the evaluation points and the amount of statisticsof the position errors for plural combinations of the process parametersin the variable range of process parameter value previously set. In thisway, the mask pattern is corrected according to the amount ofstatistics.

In recent years, examples of typical production method for photomaskpattern data using the OPC (or PPC) include a method of estimating theshift amount of proximity effect using a calculation formula orsimulation, and a method of creating a process model for estimating atransfer pattern of the mask pattern in a predetermined processincluding exposure using the design data of the mask pattern as theinput data. Further, in a method of producing photomask pattern datausing OPC (or PPC), a designed test pattern is formed on the test mask,and the design data of the test pattern rearranged according tomeasurement result of length of the test pattern on the test mask isfitted to a result of length measurement of the test pattern on the testmask (Patent Document 4: Japanese Unexamined Patent Publication Tokukai2004-157160). Since the fitting accuracy becomes higher in this fitting(experimental) model than the conventional theoretical model, thefitting (experimental) model is the main stream of the existingcommercially-available tool (provided by EDA vendor).

Examples of recent PPC are disclosed in Patent Documents 3 and 4, PatentDocument 5 (Japanese Unexamined Patent Publication Tokukai 2005-99765)and Patent Document 6 (Japanese Unexamined Patent Publication Tokukai2003-57801).

The Patent Document 4 relates to a method of finding an estimation modelof proximity effect of a highly-accurate process, such as a method offinding an unknown parameter using the test pattern made of therepetitive pattern group and the predetermined repetitive pattern groupsuch as a memory cell. Further, the Patent Document 5 relates to amethod of effectively carrying out measurement of SEM length and patterncorrection by linking the steps (in parallel) by a computer. This methodaccurately finds addition correction amount (difference) to the opticalproximity effect correction. With these methods, it is possible togreatly reduce huge work, burden and time for the conventional(correction) simulation in consideration of calculated many unknownparameters regarding mask reproduction, re-evaluation on the wafer,etching condition etc.

Note that, in LSI designing, application of restriction of criticalpattern to the design rule to improve production reliability and processyield is broadly called a DFM (Design for Manufacturability). Thenecessity of the DFM tends to increase with the recent development ofmicro-sized (90 nm, 65 nm) LSI (non-patent Document 3: “DFM: beginningof entire revision of semiconductor cost” Nikkei Micro Device Magazine,Nikkei B P, May 2005, p. 25 to 41 (published on May 1, 2005, Page 36)).

The following explains problems of typical conventional technologies.

The biggest problem of the production and validation method of photomaskpattern data using a general conventional PPC model is extraction andvalidation of PPC model. For the recent complication of LSIs as a resultof the development of micro LSI elements, a demand of micro-sizeprocessing of circuit pattern has come to the front. However, decreasein exposure wavelength of an exposure device is becoming more difficult,and therefore increase in resolution by the decrease in exposurewavelength is not practical. The insufficient resolution has been solvedby the super-resolution technology, an (immersion) exposure device, ormask design, but such methods have finally come to the limit in theseyears. Even with the circuit pattern according to the design rule, it isnot so rare that the products include a pattern (critical pattern with ainsufficient process margin) causing line-breakage or short-circuit whensubjecting the target wiring pattern (layout pattern beforemodification) to a PPC process to create a photomask and carrying outexposure, development, and etching using the photomask.

FIG. 25 shows a flow of typical conventional PPC process (non-patentDocument 2 etc.). As shown in FIG. 25, in the typical conventional PPCprocess, the mask data is created through etching correction and OPCprocess with respect to the design data of the circuit pattern. Next,the simulation validation is performed with respect to the mask data. Ifa problem such as line-breakage is found as a result of the simulationvalidation, the design data of the circuit pattern is modified, and theetching correction and OPC process is carried out again, or the maskdata is corrected. The etching correction is performed with anEtching-PC model or an Etching-PC rule extracted in advance by using themodel/rule extraction TEG pattern. Further, the OPC process is performedwith an OPC model or an OPC rule extracted in advance by using themodel/rule extraction TEG pattern.

FIGS. 26 to 30 show examples of model/rule extraction TEG pattern usedfor extraction of OPC model, OPC rule, Etching-PC model or Etching-PCrule in the typical conventional PPC process. Another example of maskpattern correction flow is a method of detecting a part where theprocess margin is reduced by simulation or the like after the PPCprocess, and then correcting the part, as disclosed in the PatentDocument 2 (Japanese Unexamined Patent Publication Tokukai 2005-134520),in the Patent Document 3 (Japanese Unexamined Patent Publication Tokukai2005-181636), or in the Patent Document 6 (Japanese Unexamined PatentPublication Tokukai 2003-57801).

The inventors of the present invention studied a circuit pattern(photomask pattern before correction) of a metal wire layer (hereinafterreferred to as a “MR layer”) of Cu or Al constituting a 130 nm flashmemory (hereinafter referred to as a “flash”) and found out that thespecific pattern among the circuit pattern (layout pattern beforecorrection) serves as a critical pattern (hereinafter referred to as“line-breakage risk pattern”) which may cause line-breakage whensubjecting the pattern to a simulation-based PPC process to createphotomask and carrying out exposure, development, and etching using thephotomask of said pattern. FIG. 3( a) to FIG. 3( e) show five concreteexamples of line-breakage risk pattern in a MR layer of a 130 nm Flash.Note that, the MR layer is a wire layer (hereinafter referred to as “L/Slayer” as appropriate) with a line and space circuit pattern.

The line-breakage risk pattern shown in FIG. 3( a) is a H-typecrosslinking pattern at least constituted of a first rectangularsection, and two first polygon sections (rectangular sections in thisexample) between which the first rectangular section is caught. The twofirst polygon sections are in contact with the respective twoshort-length sides of the first rectangular section. The two ends of therespective sides of the first polygon section in contact with theshort-length sides of the first rectangular section each extend outwardthe short-length sides of the first rectangular section. The length l1and the width w1 of the first rectangular section satisfy the followingconditions.l1<280 nm−2×ES(l1j)w1<240 nm−2×ES(w1j)

In the foregoing conditions, ES(l1 j) and ES(w1 j) respectively indicateestimated etching shift amounts (amount of size variation due to theetching shift) of the length l1 and width w1 of the first rectangularsection of the H-type crosslinking pattern. In this case, the values ofES(l1 j) and ES(w1 j) are found by back calculation (calculation offinding the length l1 and width w1 of the H-type crosslinking patternwhich becomes critical in the etching based on the measurement result ofthe length l1 and width w1 of the H-type crosslinking pattern which aremeasured after etching). The etching shift amount depends on the etchingprocess, particularly on the distance to the proximal pattern and thepattern density in the neighborhood. The values l1 j and w1 j areetching shift variables dependent on the space to the proximal patternand the pattern density in the neighborhood. The ES(l1 j) and ES(w1 j)can be found by a rule based on variables l1 j and w1 j dependent on thespace to the proximal pattern and the pattern density in theneighborhood. The rule is determined based on a pattern size of circuitmaterial after the etching using an evaluation mask including thecritical pattern. The pattern size of circuit material after the etchingusing an evaluation mask is specifically found by exposing/developing aresist using an evaluation mask, etching the circuit material using theresist, and measuring the pattern size of the circuit material after theetching. If the rule is applied, the ES(l1 j) and ES(w1 j) are severaldiscontinuous constituents. Functions or models may be applied insteadof the rule. FIG. 31 and FIG. 32 show concrete examples of the etchingshift amount. FIG. 31 shows variation in etching shift amount dependingon the space to the proximal pattern in a 130 nm process GP layer. Thefollowing shows an example of calculation formula (two-dimensional L/Spattern) of etching shift ES in the case of FIG. 31.ES=C0+C1×Space⁻² +C2×Space⁻¹ +C3×Log(Space)

where C0, C1, C2 and C3 are constant values depending on the etchingprocess. FIG. 32 shows an etching shift amount (residual error)dependent on the space of the L/S pattern (line-width afterlithography). This is an example of a simple L/S pattern, but it isnecessary to consider a long proximal pattern up to 3 or more μ meter inthe etching correction, unlike the optical proximity correction (inwhich a proximal pattern of about 1 to 2 μm is considered).

The line-breakage risk pattern shown in FIG. 3( b) is an openedrectangular pattern at least constituted of a third rectangular sectionand two third polygon sections (rectangular sections in this example)between which the third rectangular section is caught. One side of thetwo third polygon sections are in contact with the respective twoshort-length sides of the third rectangular section. One end of therespective sides of the third polygon sections in contact with theshort-length sides of the third rectangular section each extend outwardthe short-length sides of the third rectangular section. The ends extendoutward are opposed without having the third rectangular sectioninbetween. The length l4 and the width w4 of the third rectangularsection satisfy the following conditions.l4<280 nm−2×ES(l4j)w4<240 nm−2×ES(w4j)

In the foregoing conditions, ES(l4 j) and ES(w4 j) respectively indicateestimated etching shift amounts (amount of size variation due to theetching shift) of the length l4 and width w4 of the third rectangularsection of the opened-rectangular crosslinking pattern. In this case, aswith the values of ES(l1 j) and ES(w1 j), the values of ES(l4 j) andES(w4 j) are found by back calculation (calculation of finding thelength l4 and width w4 of the opened-rectangular crosslinking patternwhich becomes a critical pattern by etching, based on the measurementresult of the length l4 and width w4 of the opened-rectangularcrosslinking pattern measured after etching). The etching shift amountdepends on the etching process, particularly on the distance to theproximal pattern and the pattern density in the neighborhood. FIG. 31and FIG. 32 show concrete examples of the etching shift amount.

The line-breakage risk pattern shown in FIG. 3( c) is a crank-typecrosslinking pattern at least constituted of a second rectangularsection and two second polygon sections (rectangular sections in thisexample) between which the second rectangular section is caught. Oneside of the two second polygon sections are in contact with therespective two short-length sides of the second rectangular section. Oneend of the respective sides of the second polygon sections in contactwith the short-length sides of the second rectangular section eachextend outward the short-length sides of the second rectangular section,to be opposite to each other with respect to the second rectangularsection. The length l2 and the width w2 of the second rectangularsection satisfy the following conditions.l2<280 nm−ES(l2j)w2<240 nm−2×ES(w2j)

In the foregoing conditions, ES(l2 j) and ES(w2 j) respectively indicateestimated etching shift amounts (amount of size variation due to theetching shift) of the length l2 and width w2 of the second rectangularsection of the crank-type crosslinking pattern as with the above case.In this case, as with the values of ES(l1 j) and ES(w1 j), the values ofES(l2 j) and ES(w2 j) are found by back calculation (calculation offinding the length l2 and width w2 of the crank-type crosslinkingpattern which becomes a critical pattern by etching, based on themeasurement result of the length l2 and width w2 of the crank-typecrosslinking pattern measured after etching).

The line-breakage risk pattern shown in FIG. 3( d) is a crank-typecrosslinking pattern at least constituted of a second rectangularsection, two second polygon sections (rectangular sections in thisexample) between which the second rectangular section is caught andanother section. One side of the two second polygon sections are incontact with the respective two short-length sides of the secondrectangular section. One end of the respective sides of the secondpolygon sections in contact with the short-length sides of the secondrectangular section each extend outward the short-length sides of thesecond rectangular section, to be opposite to each other with respect tothe second rectangular section. The length l5 and the width w5 of thesecond rectangular section satisfy the following conditions.l5<280 nm−2×ES(l5j)w5<240 nm−2×ES(w5j)

In the foregoing conditions, ES(l5 j) and ES(w5 j) respectively indicateestimated etching shift amounts (amount of size variation due to theetching shift) of the length l5 and width w5 of the second rectangularsection of the crank-type crosslinking pattern as with the above case.In this case, as with the values of ES(l1 j) and ES(w1 j), the values ofES(l5 j) and ES(w5 j) are found by back calculation (calculation offinding the length l5 and width w5 of the crank-type crosslinkingpattern which becomes a critical pattern by etching, based on themeasurement result of the length l5 and width w5 of the crank-typecrosslinking pattern measured after etching).

The line-breakage risk pattern shown in FIG. 3( e) is a projectionpattern at least constituted of a rectangular projection section and apolygon main body in contact with one of the short-length sides of theprojection section. Two ends of the side of the polygon main body incontact with the short-length side of the projection section each extendoutward the short-length side of the projection section. The length l3and the width w3 of the third rectangular section satisfy the followingconditions.l3<280 nm−ES(l3j)w3<240 nm−2×ES(w3j)

In the foregoing conditions, ES(l3 j) ES(w3 j) respectively indicateestimated etching shift amounts (amount of size variation due to theetching shift) of the length l3 and width w3 of the projection pattern,as with the above case. As with the values of ES(l1 j) and ES(w1 j), thevalues of ES(l3 j) and ES(w3 j) are found by back calculation.

Generation of such critical patterns is caused by improper PPC processesof the conventional PPC model due to development of micro LSIs. Thiscircumstance has raised necessity of modification of extraction of PPCmodel or an approach (help) from the designer.

However, those critical patterns cannot be detected by a check processbased on the conventional light intensity simulation (with varieddefocus values and exposure amounts). FIG. 5 and FIG. 6 show concreteexamples.

FIG. 5 shows results of photo evaluation of photomasks includingcritical patterns, performed by the inventors of the present invention.These photomasks are used for a practical process, and has been modifiedby OPC correction. More specifically, FIG. 5 shows images (upper SEMphoto) of the upper surfaces of positive type photoresist patternscaptured by a scanning electron microscope (SEM). Each of the positivetype photoresists has been subjected to exposure and development on awafer using the photomask under an exposure amount=33.5 mJ/cm² and adefocus value=+0.15 μm. The narrow portion of the upper SEM photo is aportion with a risk of line-breakage. The photo evaluation determines,according to a SEM photo such as the one shown in FIG. 5, a positivetype photoresist without a top (resist top) in the narrow portion (thereis a risk of line-breakage in the etching process) as “NG”, anddetermines a positive type photoresist with a top in the narrow portion(there is no risk of line-breakage in the etching process) as “GOOD”.The target photomargin in this process (target exposure margin and focusmargin) is a range in which the exposure margin (the width of exposureamount ensuring a good result of photo evaluation) is not less than±3.3%, and the focus margin (the width of defocus value ensuring a goodresult of photo evaluation) is not less than ±0.18 μm. However, allpatterns of photomask in FIG. 5 are evaluated as “NG”. Generation of apositive type photoresist without a top in the narrow portion, whichcauses a risk of line-breakage in the etching process, is induced bydepression in the narrow portion of the positive type photoresist. Thisderives from light leakage in the narrow portion due to its lightintensity contrast less than the other parts.

FIG. 6 shows a light intensity simulation result of a mask including acritical pattern having been modified by OPC correction, correspondingto the positive resist pattern of FIG. 5. As shown in FIG. 6, the lightintensity simulation result shows that the width of the narrow portion(width of the resist bottom (bottom section)) is 165 nm, that meansthere is no risk of line-breakage. Thus, in the mask pattern check bylight intensity simulation, risk of line-breakage is not concerned inthe etching process, and therefore the narrow portion is not detected asa critical pattern. Therefore, the mask pattern check only by the lightintensity simulation causes a possibility of line-breakage at the stageof production of a trial circuit pattern model through exposure,development and etching by using the actual mask created according tothe mask pattern. When the occurrence of line-breakage is found, a newmask pattern needs to be produced. This increases development cost anddevelopment period.

Further, with the development of micro-sized LSI, high accuracy of PPCmodel has become a large demand. In the conventional PPC model, asimulation model is created based on a light intensity calculationresult obtained by lithography simulation with a limited threshold(variable threshold or fixed threshold) for avoiding short-circuit ofsimulation pattern and a limited threshold (variable threshold or fixedthreshold) for avoiding line-breakage, and the various sizes (line widthetc.) of the circuit pattern obtained by exposure, development, andetching of a resist using the mask are calculated according to thesimulation model (variable threshold model or fixed threshold model).Further, in a conventional PPC model, a simulation model is createdbased on a light intensity calculation result obtained by lithographysimulation, with a simplified estimation of effect of photoresistdevelopment and etching effect. Therefore, to obtain a highly accuratePPC model, the estimation of photoresist shape by way of exposurecalculation and development calculation can be performed with higheraccuracy. However, the process time of pattern correction increases, anda load of device performing pattern correction calculation increases.

Further, in the case of creating mask pattern data from the design dataof a semiconductor circuit, complex data processes such as PPC orauxiliary pattern production are required because of recent developmentof micro semiconductor. Therefore, after the data processes, a patternvalidation (check) process is required to assess adequacy of dataresults. There are various pattern validation methods. For example, thevalidation method after PPC may be performed by a method of checking thepattern data after PPC according to the PPC rule, or a method using anempirical model of checking the pattern resulted from exposure whetherthe pattern satisfies the target size. The pattern validation isbecoming more important with the further development of microsemiconductor element. This has caused a demand for a validationtechnology with high accuracy.

The following explains the problems of Patent Documents of 2, 3, 5 and 6which are the features to be addressed by the example embodimentpresented herein.

FIG. 2 shows a flow chart of a mask pattern data creation processaccording to the Patent Document 2 (Japanese Unexamined PatentPublication Tokukai 2005-134520).

In the mask pattern data creation process of the Patent Document 2, thedesign pattern is modified first to satisfy the process margin (S111),and then is modified into a proximity effect correction pattern forrealizing the design pattern modified in S111 (S112). Next, the processmargin is examined to check whether it is not less than the referencevalue (S113). Then, any part with process margin out of the referencevalue is subjected to pattern correction (S114). After output of maskdata, a mask is created (S115).

FIG. 1, FIG. 3, and Paragraphs [0017], [0019], [0021], and [0023] of thePatent Document 2 describe conversion of design data into a desiredpattern ensuring a desired process margin in S111 before the opticalproximity effect correction by changing the pattern of amount deltacorresponding to the pattern width L and the pattern gap S, based on theconversion table (table of rules) of FIG. 3. Specifically, the paragraph[0021] of Patent Document 2 reads “the conversion amount delta . . . formaintaining a process margin can be determined by an exposure test usingmasks of varied parameters of a line width or a space width of the Lines& Space pattern, or by light intensity simulation”.

More specifically, the Patent Document 2 describes that a correctionrule for maintaining a process margin is determined by an exposure testusing masks of varied parameters of a line width or a space width of theLines & Space pattern, and the correction is carried out according tothe correction rule before and after the optical proximity effectcorrection.

However, the method of Patent Document 2 carries out correction so as tomaintain the process margin of the pattern after the optical proximityeffect correction, that is, the method is not to detect and correct apattern which becomes a critical pattern in the optical proximity effectcorrection. Therefore, in the method of the Patent Document 2, the areaof a local margin degradation point of the design pattern in the opticalproximity effect correction cannot be removed before the opticalproximity effect correction. This is written in Paragraph [0025] of thePatent Document 2 as “At the stage after the proximity effect correctionsection S12, a local margin degradation point remains”. Further, in thePatent Document 2, only a mask including Lines & Space pattern isdisclosed as a mask for the exposure test, and there is no teaching of amask including a pattern which becomes critical in the optical proximityeffect correction, such as a H-type crosslinking pattern.

Further, paragraph [0024] of the Patent Document 2 reads “the desiredpattern may be formed on a portion where the process margin decreases ina two-dimensional manner. For example, . . . in the case where thedesign pattern 105 is constituted of large-area rectangle andnarrow-line patterns, the width 102 of the large-area pattern is anarrow line”. However, a method of detecting a pattern which becomescritical in the optical proximity effect correction before performingthe optical proximity effect correction is not found in thisdescription.

Further, Paragraphs [0026] to [0029], and [0035] of the Patent Document2 disclose pattern correction with respect to an extracted pattern whoseprocess margin is equal to or less than the reference value after theoptical proximity effect correction.

However, in the Patent Document 2, the extraction of the part (pattern)whose process margin is equal to or less than the reference value afterthe optical proximity effect correction is performed by comparison withthe distribution form of light intensity obtained by a light intensitysimulation. As described above, the conventional check process based onthe light intensity simulation is not capable of detecting a patternwhich becomes critical in the optical proximity effect correction (shownin FIG. 5 and FIG. 6). Therefore, detection and correction of a patternwhich becomes critical in the optical proximity effect correction (shownin FIG. 5 and FIG. 6) is not possible even by a method of patternextraction and pattern correction after the optical proximity effectcorrection disclosed in the Patent Document 2.

In conclusion, the OPC process in Patent Document 2 is inadequate, as itis not capable of detecting and correcting a pattern (FIG. 5 and FIG. 6)which becomes critical in the optical proximity effect correction.Therefore, if a lithography process is performed with a photomask whichis formed based on the photomask pattern of the Patent Document 2 havingbeen through the OPC process, the process spec (such as process margin)is not achieved in the entire area. Consequently, it becomes necessaryto check whether the process spec is satisfied, and correct the layoutas required after the photolithography process by way of photoevaluation (evaluation based on an image captured by an electronmicroscope). That is, it is necessary to correct the design data ofphotomask after the photolithography process, create a new photomask,and subjects the new mask to photo evaluation again. This brings a greatwaste of cost and a great delay of development. In view of this problem,there is a demand for a validation technology capable of detecting thecritical pattern such as the ones shown in FIG. 5 and FIG. 6, so as torealize a highly-accurate OPC process with which the layout correctionafter the photolithography process is not necessary.

The Patent Documents 3, 5, and 6 describe existing OPC process flow orPPC process flow. For example, in Patent Document 3, the differencebetween the target pattern and the estimation (simulation) value isfound using the mask pattern data after the OPC process, and thedifference is used as an index of mask pattern correction. In PatentDocument 5, an unknown parameter is found using a mask including a testpattern. Various test patterns produced from a base pattern or arepetitive pattern with varied biases and pitches are used. In PatentDocument 6, the measured length by a SEM and a mask pattern coordinateare associated to find the difference of them, and the difference isused as an index of mask pattern correction. However, these methodscarry out validation, extraction, and correction to resulting maskpattern data, that is, carry out validation, extraction, and correctionof mask pattern data after creation of mask pattern data. Those methodsthus do not allow mask pattern data correction before creation of maskpattern.

SUMMARY

The example embodiment presented herein is made in view of the foregoingconventional problems, and a feature is to provide correction method andcorrection system for mask pattern data, validation method andvalidation system for mask pattern data for ensuring the process spec(including the process margin) after a PPC process. With the assuranceof the process spec, the present embodiment prevents wastes in cost anddevelopment period due to mask design data correction, maskreproduction, and an extra photo evaluation process after thelithography process. The present embodiment also provides a yieldestimation method for semiconductor integrated circuit, a method ofimproving design rule, a mask production method, and a semiconductorintegrated circuit production method using the correction method, thecorrection system, the validation method and the validation system.

A correction method for design data or mask data according to thepresent embodiment is a mask pattern data correction method, said methodcorrecting design data or pattern data of a lithography mask so that themask forms a desired size of circuit pattern through a microfabricationprocess such as lithography or etching using the mask, the methodcomprising the steps of: (i) carrying out proximity effect correction atleast including etching proximity effect correction with respect todesign data or mask data; (ii) a first measurement step for exposing aresist using evaluation mask including plural patterns varied inparameter value, a part of which is a critical pattern which becomescritical on process proximity effect correction, developing the resistexposed, and measuring a pattern size of the resist developed; (iii) asecond measurement step for etching a circuit material using the resisthaving been developed, and measuring a pattern size of the circuitmaterial after the etching; (iv) determining parameter numericalcondition for preventing the design data or pattern data from beingcritical on process proximity effect correction, based on the patternsize of the resist and the circuit material measured in the first andsecond measurement steps; (v) extracting a pattern with a parameter notsatisfying the foregoing numerical condition from the design data or themask data as a critical pattern which becomes critical on processproximity effect correction; and (vi) correcting the design data or themask data so that the critical pattern extracted have a parametersatisfying the foregoing numerical condition.

The foregoing method carries out in advance exposure and development ofa resist using an evaluation mask including a critical pattern whichbecomes critical on process proximity effect correction, measures thepattern size of the resulting resist, determines numerical parametercondition (risk prevention (prohibiting) rule, such as a lower limit ofline width or a lower limit of space) for preventing the pattern datafrom being critical on process proximity effect correction, based on thepattern size of the resist, as a reference of determining the presenceof the pattern which becomes critical on process proximity effectcorrection, and extracts a pattern not satisfying (falling above) thenumerical parameter condition as a critical pattern. Then, the designdata or the mask data is corrected so that the parameter(s) of thecritical pattern satisfy the foregoing numerical condition.

This method allows creation of the design data or the mask data notincluding a portion which becomes critical on process proximity effectcorrection. Therefore, the process spec (incl. process margin) can beattained after the photolithography process or etching process using amask created based on the design data or the mask data. In the designdata or the mask data corrected by the conventional imperfect PPC, therehas been a problem of discordance between the pattern size measuredafter the photolithography process or etching process using a maskcreated based on the design data or the mask data and the process spec(incl. process margin). However, the foregoing method of the presentembodiment solves such a problem, and does not require layout correctionafter the photolithography process or etching process using a maskcreated based on the mask pattern data, namely, correction of the designdata, creation of a new photomask, and another photo evaluation for thenew mask. This prevents wastes of cost and development time (this isalso an advantage in terms of global environment conservation.)

Additional objects, features, and strengths of the present inventionwill be made clear by the description below. Further, the advantages ofthe present invention will be evident from the following explanation inreference to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a drawing conceptually showing a mask pattern data correctionmethod according to one embodiment.

FIG. 1B is a flow chart showing mask pattern data validation andcorrection methods according to one embodiment.

FIG. 2 is a flow chart showing a conventional mask pattern data creationmethod.

FIG. 3( a) to FIG. 3( e) are drawings showing a concrete example of apattern which becomes critical after a PPC process.

FIG. 4( a) and FIG. 4( b) are drawings showing examples of model basePPC pattern in a SRAM memory cell.

FIG. 5 is a drawing showing SEM measurement results (risk portions) ofcritical patterns.

FIG. 6 is a drawing showing a simulation result (risk portions) of acritical pattern.

FIG. 7( a) to FIG. 7( e) show concrete examples of PPC model extractionTEG pattern (critical pattern in the present method).

FIG. 8 is a drawing showing a concrete example of PPC model extractionTEG pattern (conventional method).

FIG. 9( a) to FIG. 9( j) show concrete examples (the present examples)of a PPC critical pattern with an insufficient process margin

FIG. 10A is a drawing showing a H-type crosslinking pattern example anda SEM measurement result (risk portion).

FIG. 10B(a) and FIG. 10B(b) show simulation results of H-typecrosslinking pattern.

FIG. 11( a) and FIG. 11( b) show H-type crosslinking pattern L/W.

FIG. 12( a) to FIG. 12( c) show simulation results of micro projectionpattern dependencies on 2 L/W.

FIG. 13 is a drawing showing a concrete example of PPC patterncorrection with lower-limit restriction.

FIG. 14 is a drawing showing line width/length examples as concreteexamples of DFM rule.

FIG. 15 is a drawing showing a micro level-difference rule as a concreteexample of DFM rule.

FIG. 16( a) to FIG. 16( c) show concrete examples of micro projectionpattern and micro level-difference pattern.

FIG. 17 is a drawing showing an example of design rule addition (Logicprocess/MR layer).

FIG. 18 is a block diagram showing a structure of a conventional maskpattern validation system.

FIG. 19( a) and FIG. 19( b) are explanatory views showing an existingphotolithography process and an existing semiconductor microfabricationprocess.

FIG. 20 is a block diagram showing a structure of a photomask patterncorrection system according to one embodiment.

FIG. 21 is a drawing for explaining a fitting function.

FIG. 22 is a drawing showing a concrete example (L/S density) ofline-terminal butting pattern.

FIG. 23 (a) is a drawing showing a concrete example of lower-limit L/Wvalue extraction table in a H-type crosslinking pattern.

FIG. 23 (b) is a drawing showing a concrete example of lower-limitrestriction rule (actual measurement result) after OPC in the H-typecrosslinking pattern and in the crank-type pattern.

FIG. 24 is a drawing showing an operation flow of process proximityeffect correction.

FIG. 25 is a drawing showing a flow of typical conventional PPC process.

FIG. 26 is a drawing showing another example of model/rule extractionTEG pattern used in a conventional PPC process.

FIG. 27 is a drawing showing still another example of model/ruleextraction TEG pattern used in a conventional PPC process.

FIG. 28 is a drawing showing yet another example of model/ruleextraction TEG pattern used in a conventional PPC process.

FIG. 29 is a drawing showing still another example of model/ruleextraction TEG pattern used in a conventional PPC process.

FIG. 30 is a drawing showing yet another example of model/ruleextraction TEG pattern used in a conventional PPC process.

FIG. 31 is a drawing showing a change in etching shift amount dependenton the space to the proximal pattern in a 130 nm process GP layer.

FIG. 32 shows a correspondence between the value of the line width and ameasured value (O: graded dots) of the L/S pattern shown in FIG. 31. Inthis figure, the vertical axis expresses a residual error (nm)approximated by Formula (1).

DESCRIPTION OF THE EMBODIMENTS Explanation of the Present Embodiment

FIG. 1A shows an example of PPC process flow according to an exampleembodiment. FIG. 1B shows the details. In this example of PPC processflow of FIG. 1A, a PPC critical pattern is extracted by an extractionTEG (PPC critical extraction pattern) so as to correct the layout. Thelayout correction is reflected to the design rule if possible. With thisthe layout does not need to be corrected in the designing thereafter. Inthis PPC process flow, it is not necessary to reproduce the design dataaccording to a validation result. A short-circuit prevention pattern anda line-breakage prevention pattern are required as a PPC criticalextraction pattern.

Note that, in the present specification, unless otherwise specified,“the process proximity effect correction” designates not only correctiononly with respect to shift in the etching process after the exposure(etching proximity effect correction), but also such as correction forcorrecting shift in the etching process after the exposure and sizeshift in a mask process in addition to correction with respect to shiftin the exposure process. Further, in the present specification, thewording “(the design data or the mask data) becomes critical on processproximity effect correction” indicates (i) defects of circuit patternsuch as short-circuit or line-breakage in an etching process of acircuit material (silicon, metal etc.) due to the mask used, after themask is produced through process proximity effect correction of thedesign data or the mask data, creation of a mask using the design dataor the mask data, exposure of resist using the mask, and development ofthe exposed resist, or (ii) parameters, which denote unlikeliness ofdefects such as a process margin (eg. allowable size error ensuringprevention of line-breakage or short-circuit), falling belowpredetermined numerical ranges (process spec).

Typical numerical conditions of parameter include a predetermined linewidth condition such as “a line width not less than the lower limit” anda predetermined space (gap between lines) condition such as “space notless than the lower limit”. However, the numerical condition is notlimited to those.

Note that, the critical pattern on the process proximity effectcorrection depends on a parameter of the pattern itself, and alsodepends on a parameter of exposure process such as an optical parameter(optical aberration or flare) or a parameter of the development processafter the exposure such as a development speed of resist. The presentinvention focuses on a critical property due to a geometric shape ofpattern. That is, a basic function of the present invention isextraction of a critical pattern according to an index of pattern sizeparameter.

A plurality of patterns of the evaluation mask have patterns which maybecome critical by degradation of process margin due to geometric shapeof a pattern, and include plural patterns with different parameters.Typical critical patterns causing degradation of process margin due to(geometric shape of) a pattern include (a) H-type crosslinking pattern,(b) crank-type crosslinking pattern (described later), (c) projectionpattern (described later), (d) ring pattern (described later), (e)pectinate line and space pattern, and combination pattern of at leasttwo of these patterns (see FIG. 7( a) to FIG. 7( e)). Other criticalpattern causing degradation of process margin due to (geometric shapeof) a pattern may be a micro line and space (L & S) pattern, a dotpattern, or a micro gap pattern.

A validation method for the design data or the mask data according tothe present embodiment is a validation method for design data or maskdata which carries out validation as to whether design data or mask dataincludes a critical pattern, which becomes critical on process proximityeffect correction, in a microfabrication process for carrying outprocess proximity effect correction at least including etching proximityeffect correction with respect to design (layout) data or mask data of alithography mask, said validation being performed before and after theprocess proximity effect correction, the method comprising the steps of:(i) a measurement step for exposing a resist using an evaluation maskincluding plural patterns varied in parameter value, a part of which isa critical pattern which becomes critical on process proximity effectcorrection, developing the resist exposed, and measuring a pattern sizeof the resist developed; (ii) determining parameter numerical conditionfor preventing the design data or the pattern data from being criticalon process proximity effect correction, based on the pattern size of theresist and the circuit material measured in the measurement step; and(iii) extracting a pattern with a parameter not satisfying the foregoingnumerical condition from the design data or the mask data as a criticalpattern which becomes critical on process proximity effect correction.

This method allows detection of a portion which becomes critical onprocess proximity effect correction before carrying out amicrofabrication process using an actual mask. Therefore, the problem ofthe defect portion which becomes critical on process proximity effectcorrection can be solved (eg. by modification of design rule or maskdata correction) before carrying out a microfabrication process using anactual mask. Therefore, after the microfabrication process, the processspec (incl. process margin) cannot be attained due to insufficient PPC.Then, for layout correction, it is necessary to correct the design data,create a new photomask, and subjects the new mask to photo evaluationagain. This brings great wastes of cost and development time. However,the foregoing method solves such a problem entirely. (this is also anadvantage in terms of global environment conservation.)

In the validation method and correction method according to the presentembodiment, extraction of critical pattern may be carried out eitherbefore the process proximity effect correction or after the processproximity effect correction. Further, in the correction method accordingto the present embodiment, the pattern correction with respect to theextracted critical pattern may be carried out either before the processproximity effect correction or after the process proximity effectcorrection (including the case of pattern correction during the processproximity effect correction).

In the case of carrying out the foregoing steps before the processproximity effect correction, the rule-based critical pattern extractionusing a DRC tool and the pattern correction may be performed with simplemask pattern data or design data having not been through the processproximity effect correction. On this account, critical patternextraction and pattern correction may be performed with a small load ofprocess.

On the other hand, in the case of carrying out the foregoing step afterthe process proximity effect correction, high accuracy of the patternresulted from the PPC correction is ensured (optimize the pattern). Onthis account, it is possible to obtain an effect of maximally improvingthe process margin. In consideration of cost of photomask, cost of photoevaluation, and required development time (at least about a month), theforegoing effects of cost reduction and period reduction ensure the sameeffect regardless of whether the foregoing steps are performed before orafter the PPC process.

The evaluation mask used in the present embodiment includes a patternwhich becomes critical when the mask is subjected to the processproximity effect correction, regardless of whether the extraction of thecritical pattern is performed before or after the PPC process.

The validation method of the present embodiment carries out processevaluation (evaluation according to the pattern size of the resistmeasured in the step (i)), extraction of condition of a pattern whichbecomes critical on process proximity effect correction (rule; numericalparameter condition), and extraction of a defect portion (criticalpattern) based on the condition. Note that, apart from the extraction ofa defect portion (critical pattern), the extraction of defect portionmay be performed by a combination of pattern matching andsimulation-based CD margin check, or contrast check of light intensitygradient.

A yield estimation method for semiconductor integrated circuit accordingto the present embodiment is a method of estimating a yield of asemiconductor integrated circuit in a manufacturing method for asemiconductor integrated circuit by a microfabrication process includinga proximity effect correction step for carrying out process proximityeffect correction with respect to design data or pattern data of alithography mask, the method comprising the steps of:(i) extracting acritical pattern using the validation method according to the presentinvention; and (ii) estimating a yield of a semiconductor integratedcircuit based on at least one of: (a) whether or not a critical patternis extracted, (b) density of the extracted critical pattern, (c) adegree of error of a parameter of the extracted critical pattern withrespect to a boundary value of the foregoing parameter numericalcondition.

The validation method according to the present embodiment allowsextraction of a critical pattern which becomes critical on processproximity effect correction in a semiconductor integrated circuit suchas a LSI, for example, a pattern which may cause line-breakage onprocess proximity effect correction, a pattern which may causeshort-circuit on process proximity effect correction, or a pattern whichmay cause insufficient process margin due to geometric shape of thepattern on process proximity effect correction (for example, error ofallowable size for ensuring prevention of line-breakage or short-circuiton process proximity effect correction).

In the manufacturing of a semiconductor integrated circuit, the finalyield is determined depending on the electric characteristic of theresulting semiconductor integrated circuit (eg. electric characteristicof the transistor). The electric characteristic of the resultingsemiconductor integrated circuit depends on the presence, the density,and the degree (degree of error of the parameter with respect to theboundary value of the foregoing parameter numerical condition, whichdenotes likeliness of line-breakage or short-circuit) of a criticalpattern. That is, the yield of semiconductor integrated circuitproduction depends on the presence, the density, and the degree of acritical pattern.

The foregoing yield estimation method estimates the yield of asemiconductor integrated circuit based on: (a) whether or not a criticalpattern is extracted, (b) density of the extracted critical pattern, and(c) a degree of error. In this way, it is possible to reconsider thedesign in consideration of the yield of a semiconductor integratedcircuit, and the yield can be improved.

The yield estimation may be performed by checking at least one of thepresence, the density and the degree of a critical pattern in a patternincluding a circuit critical path extracted by LSI circuit simulation(incl. timing simulation) or the like.

More specifically, the foregoing method of estimating a yield of asemiconductor integrated circuit may further comprise the steps of:(iii) extracting a circuit critical path by circuit simulation includingtiming validation from design data of the semiconductor integratedcircuit; and (iv) estimating a yield of the semiconductor integratedcircuit based on at least one of: (a) whether or not a critical patternis extracted, (b) density of the extracted critical pattern, (c) adegree of error of a parameter of the extracted critical pattern withrespect to a boundary value of the foregoing parameter numericalcondition, for a mask pattern corresponding to an arbitrary mask patternincluding a part or an entire of a critical path having been extracted.With this method, it is possible to exclude a mask pattern correspondingto a layout layer not including a critical path from the group ofpatterns to be analyzed. In this way, efficiency and accuracy of theyield estimation can be further improved.

Note that, “design data or mask data which may cause line-breakage onprocess proximity effect correction” indicates a possibility ofline-breakage in an etching process of a circuit material due to themask used, after the mask is produced through process proximity effectcorrection of design data or mask data, creation of a mask using thedesign data or the mask data, exposure of resist using the mask, anddevelopment of the exposed resist. On the other hand, “design data ormask data which may cause short-circuit on process proximity effectcorrection” indicates a possibility of short-circuit in an etchingprocess of a circuit material due to the mask used, after the mask isproduced through process proximity effect correction of design data ormask data, creation of a mask using the design data or the mask data,exposure of resist using the mask, and development of the exposedresist.

By evaluating the photo/etching characteristic (process margin ormodification degree) of the critical pattern by using the extraction TEGaccording to the present invention, extracting these patterns in anactual LSI, and estimating the degree of influence to the yield byfull-chip simulation, it is possible to evaluate the yield. The yield ofLSI is determined by considering various factors. In this example,influences of size accuracy and variation in the microfabrication, andmargin (process margin) with respect to a process-dependent factor tothe yield are estimated. They are dependent on the critical pattern(worst rate controlling). Therefore by finding a correlation between theestimation using a full-chip simulation (incl: TCAD) and the actualmeasurement, it becomes possible to estimate the yield based on thecorrelation.

For example, it is possible to actually create a LSI including acritical pattern, and find the yield of LSI production based on theelectric characteristic of the transistor section of the LSI.

A method of improving design rule according to the present embodiment isa method of improving a design rule in a microfabrication process whichincludes the steps of laying out a pattern of a semiconductor integratedcircuit pattern data according to a design rule; and carrying outprocess proximity effect correction with respect to the design (layout)data or the mask data of a semiconductor integrated circuit having beenlaid out, the method comprising the steps of: (i) extracting a criticalpattern using the validation method according to the present invention;and (ii) when a critical pattern is extracted, including a rule “satisfythe numerical parameter condition” into the design rule.

The critical pattern extracted by the validation method according to thepresent embodiment (a critical pattern in which the process margindecreases at least depending on the pattern) may be fed back to thedesign by addition or modification of design rule. That is, with theextraction of the critical pattern, the design rule can be improved.With this method, the design rule may be improved, and DFM (Design forManufacturability) is realized.

To enable such a feedback to the design by addition or modification ofdesign rule, the design rule is formed as a data item (data structure)with a spec allowing expression which can be defined in a geometricmanner. The data of the design rule is structured (or have a certainspec) to be able to be updated by adding a new design rule to the designrule thus defined, or by modifying a part of the design rule. The ruleadded in the improvement method may be a rule regarding a geometricshape such as patterns (1) to (4) (described later), for example. Thisrule regarding the shape can be actually added to the existing designrule.

In the case of using the critical pattern extracted by the method of thepresent embodiment for design rule improvement or for ensuring DFM, theevaluation extraction TEG pattern is preferably structured with a speccompatible with DRC, LVS (Layout versus Skema) of the design. The “thespec compatible with DRC, LVS of the design” in this case indicates anextraction TEG pattern based on the design rule adopted in the designingprocess, and if there are a plurality of layers, the DRC and LVS may beapplied to the extraction TEG pattern similarly to the LSI design dataeven for an superimposed rule because of the base according to the ruleadopted in the designing process. More specifically, the extraction TEGpattern is constituted of parts (blocks) which can be used for designingwithout modification. Note that, the LVS is generally processed with DRCafter the design layout is completed before the PPC process. The DRC andLVS are carried out after the designing before the Tape Out.

Note that, the design rule of the production process of an integratedcircuit (the first half process) is defined in consideration of theparameter regarding the processing in the step (such as a minimumprocess size of the pattern) and determination as to whether theelectric characteristic of the resulting integrated circuit (chip) meetsthe spec.

A correction method for design data or mask data according to thepresent embodiment is preferably arranged so that the evaluation maskincludes, as the critical pattern, at least one of: (i) a H-typecrosslinking pattern at least constituted of a first rectangularsection, and two first polygon sections between which the firstrectangular section is caught, the two first polygon sectionsrespectively being in contact with two short-length sides of the firstrectangular section, two ends of the respective sides of the firstpolygon section in contact with the short-length sides of the firstrectangular section each extending outward the short-length sides of thefirst rectangular section; (ii) a crank-type rectangular pattern atleast constituted of a second rectangular section and two second polygonsections between which the second rectangular section is caught, oneside of the two second polygon sections being in contact with respectivetwo short-length sides of the second rectangular section, one end ofrespective sides of the second polygon sections in contact with theshort-length sides of the second rectangular section each extendingoutward the short-length sides of the second rectangular section, to beopposite to each other with respect to the second rectangular section;(iii) a projection pattern at least constituted of a rectangularprojection section and a polygon main body in contact with one ofshort-length sides of the projection section, two ends of side of thepolygon main body in contact with the short-length side of theprojection section each extending outward the short-length side of theprojection section; (iv) a ring pattern having a rectangular opening;and (v) a pectinate pattern constituted of a pair of opposed pectinatesections in which two comb-teeth of one of the pectinate sectionstherebetween have a comb-tooth of the other pectinate section.

The patterns (1) to (3) cannot be corrected sufficiently by theconventional process proximity effect correction (particularlysimulation-based process proximity effect correction), and is highlylikely to cause line-breakage on the process proximity effectcorrection. In the foregoing method, the numerical parameter conditionis determined using an evaluation mask including at least one of thepatterns (1) to (3) which is very likely to cause line-breakage on theprocess proximity effect correction. In this manner, a critical patternwhich causes line-breakage on the process proximity effect correction(or a critical pattern which is very likely to cause line-breakage onthe process proximity effect correction) can be more securely extractedbased on the numerical parameter condition. Further, the criticalpattern which causes line-breakage on the process proximity effectcorrection (or a critical pattern which is very likely to causeline-breakage on the process proximity effect correction) can be moresecurely corrected.

In this method, the evaluation mask (PPC extraction TEG mask) is createdby adding at least one of the critical patterns (1) to (3) to theconventional PPC model extraction TEG pattern, for example.

Similarly, the ring pattern (4) and the pectinate pattern (5) alsocannot be corrected sufficiently by the conventional process proximityeffect correction (particularly simulation-based process proximityeffect correction), and are highly likely to cause short-circuit on theprocess proximity effect correction. In the foregoing method, thenumerical parameter condition is determined using an evaluation maskincluding the ring pattern (4) and the pectinate pattern (5) which arevery likely to cause short-circuit on the process proximity effectcorrection. In this manner, a critical pattern which causesshort-circuit on the process proximity effect correction (or a criticalpattern which is very likely to cause short-circuit on the processproximity effect correction) can be more securely extracted based on thenumerical parameter condition. Further, the critical pattern whichcauses short-circuit on the process proximity effect correction (or acritical pattern which is very likely to cause short-circuit on theprocess proximity effect correction) can be more securely corrected.

Note that, the five types of patterns cannot be detected as criticalpatterns by the method in which extraction and PPC of the criticalpattern are performed based on a predetermined parameter threshold(threshold model) for determining a critical pattern, which threshold isfound (extracted) using the conventional PPC model extraction TEGpatterns (the line and space (L/S) pattern disclosed in the PatentDocument 5, a repetitive pattern such as a cell pattern, or the modelparameter extraction TEG pattern in the Patent Document 7 (JapaneseUnexamined Patent Publication Tokukai 2004-302263)) with variedparameters of line density, linearity, proximity degree of therespective line terminals etc. This is because the parameter threshold,such as the lower limit of a line width, the lower limit of space etc.changes depending on the pattern shape, and the parameter threshold forthe 5 types of critical pattern differ from the parameter threshold ofthe conventional PPC model extraction TEG pattern. Therefore, the 5types of critical pattern or the complex pattern including thesepatterns cannot be checked (extracted) by the threshold model (the valueadjusted according to the resist bottom size) which has beenconventionally used as a PPC model.

To perform detection of the five types of critical pattern, theforegoing method determines numerical parameter condition (rule) usingan extraction TEG mask including at least one of the five types ofcritical pattern, and extracts a critical pattern based on the numericalcondition. Note that, extraction of critical pattern is performed for acorrection operation for preventing line-breakage, short-circuit etc.

The numerical parameter condition (rule) for extracting the criticalpattern may be used as a rule of rule-base (pattern matching) on the PPCcorrection, or may be combined with a PPC model by using a variablethreshold model or the like.

A half ring pattern shown in FIG. 14( b) may also be used as the ringpattern (4). Further, the pectinate pattern is a narrow space pattern(have a risk of short-circuit) with teeth combined in a complex manner.

The evaluation mask preferably includes, as critical patterns, all ofthe H-type crosslinking pattern, the crank-type crosslinking pattern,the projection pattern, and the ring pattern.

In the H-type crosslinking pattern, the size W1 of the first polygonsection along the width direction of the first rectangular section(crosslinked portion) is not particularly limited as long as it isgreater than the width w1 of the first rectangular section. The size W1however preferably satisfies the following formula (except for theoff-grid case),W1−w1≧2×Min G

where Min G indicates a minimum unit (minimum grid) in the layoutdesigning.

The “off-grid case” indicates a case where the apex of the polygonconstituting the pattern does not reside on the lattice point in a gridof the smallest size unit of the layout designing. In such a case, theforegoing evaluation (calculation) is carried out after the apex of thepolygon is moved to the most proximal lattice point so that the apexresides on the lattice point. This is applied also to other formulaswith the condition “except for the off-grid case”.

In the H-type crosslinking pattern, the first rectangular sectionpreferably has a micro size. More specifically, the length l1 and widthw1 of the first rectangular section preferably satisfy the followingformula,l1<lH=Min Space+2×ΔPPCw1<wH=k1λ/NA+2×ΔPPC

where lH and wH are fixed values determined by exposure condition,process condition, and process proximity effect correction condition,and Min Space denotes an allowable minimum space value in the designrule, Δ PPC denotes a minimum correction unit for the target portion ofmask pattern correction (corner section etc.) in the process proximityeffect correction, λ indicates exposure wavelength, NA indicatesnumerical aperture of the optical system of the exposure device, and k1denotes process factor.

The term of k1λ/NA in the formula indicates wiring width. This term isthe “Rayleigh formula” well known by a person in the art, and denotesresolving power of the exposure device. Further, the process factor k1is a factor which decreases as the pattern size decreases, that is, asmaller value thereof indicates greater difficulty of processing. Theterm ΔPPC is added to the foregoing formula in consideration of theminimum correction size in the process proximity effect correction. ΔPPCis a value ranges from the minimum line width to ⅓ of the minimum width.For example, if the mask pattern to be corrected is a mask pattern forforming the first flash MR layer having a minimum line width of 130 nmlevel, l1 is not less than 280 nm−2×ES(l1 j), or w1 is not less than 240nm−2×ES(w1 j), as shown in FIG. 14.

In the crank-type crosslinking pattern, the size W2 of the secondpolygon section along the width direction of the second rectangularsection (crosslinked portion) is not particularly limited as long as itis greater than the width w2 of the second rectangular section. The sizeW2 however preferably satisfies the following formula (except for theoff-grid case),W2−w2≧Min G

where Min G indicates a minimum unit (minimum grid) in the layoutdesigning.

In the crank-type crosslinking pattern, the second rectangular sectionpreferably has a micro size. More specifically, the length l2 and widthw2 of the second rectangular section preferably satisfy the followingformula,l2<1C=Min Space+2×ΔPPCw2<wC=k1λ/NA+2×ΔPPC

where, lH and wH are fixed values determined by exposure condition,process condition, and process proximity effect correction condition,and Min Space denotes an allowable minimum space value in the designrule, Δ PPC denotes a minimum correction unit for the target portion ofphotomask pattern correction (corner section etc.) in the processproximity effect correction, λ indicates exposure wavelength, NAindicates numerical aperture of the optical system of the exposuredevice, and k1 denotes process factor. For example, the photomaskpattern to be corrected is a mask pattern for forming the first flash MRlayer having a minimum line width of 130 nm level.

In the projection pattern, the size W3 of the main body section alongthe width direction of the projection section is not particularlylimited as long as it is greater than the width w3 of the projectionsection. The size W3 however preferably satisfies the following formula(except for the off-grid case),W3−w3≧2×Min G

where Min G indicates a minimum unit (minimum grid) in the layoutdesigning.

In the projection pattern, the projection section preferably has a microsize. More specifically, the length l3 and width w3 of the projectionsection preferably satisfy the following formula,l3<1P=Min Space+2×ΔPPCw3<wP=k1λ/NA+2×ΔPPC

where lP and wP are fixed values determined by exposure condition,process condition, and process proximity effect correction condition,and Min Space denotes an allowable minimum space value in the designrule, Δ PPC denotes a minimum correction unit for the target portion ofmask pattern correction (corner section etc.) in the process proximityeffect correction, λ indicates exposure wavelength, NA indicatesnumerical aperture of the optical system of the exposure device, and k1denotes process factor.

For example, if the mask pattern to be corrected is a mask pattern forforming the first flash MR layer having a minimum line width of 130 nmlevel, l3 is not less than 280 nm−ES(l3 j), or w3 is not less than 240nm−2×ES(w3 j), as shown in FIG. 14.

In the ring pattern, it is preferable that the width (line width) of thering portion is narrow. More specifically, it is preferable that each ofthe width of the portion extending along the first direction of the ringportion and the width of the portion extending along the seconddirection of the ring portion orthogonal to the first direction isconstant, and the values l4 and w4 (l4 expresses the longer one of thewidth of the portion extending along the first direction of the ringportion and the width of the portion extending along the seconddirection of the ring portion orthogonal to the first direction and w4expresses the shorter one of the width of the portion extending alongthe first direction of the ring portion and the width of the portionextending along the second direction of the ring portion orthogonal tothe first direction) satisfy the following formula,l4<lR=Min Space+2×ΔPPCw4<wR=k1λ/NA+1×ΔPPC

where lR and wR are fixed values determined by exposure condition,process condition, and process proximity effect correction condition,and Min Space denotes an allowable minimum space value in the designrule, Δ PPC denotes a minimum correction unit for the target portion ofmask pattern correction (corner section etc.) in the process proximityeffect correction, λ indicates exposure wavelength, NA indicatesnumerical aperture of the optical system of the exposure device, and k1denotes process factor.

However, wR in the formula is applied in the case of a single ringpattern (single rectangular pattern) or a combination pattern of a ringpattern and the pattern (1), (2) or (3). In the case of a patternconstituted of continuous plural ring patterns, wR satisfies thefollowing formula.wR=k1λ/NA+2×ΔPPC

For example, the photomask pattern to be corrected is a mask pattern forforming the first flash MR layer having a minimum line width of 130 nmlevel. Note that, in the foregoing ring pattern, L4 which expresses asize of the opening along the long width and W4 which expresses a sizeof the opening along the short width are not limited.

Further, the evaluation TEG may include, as the critical pattern, otherpatterns such as an opened-rectangular (U-shape) pattern or a crosspattern. Also for the opened-rectangular (U-shape) pattern or the crosspattern, it is preferable that each of the width of the portionextending along the first direction of the ring portion and the width ofthe portion extending along the second direction of the portionorthogonal to the first direction is constant, and the values l4 and w4(l4 expresses the longer one of the width of the portion extending alongthe first direction of the portion and the width of the portionextending along the second direction of the portion orthogonal to thefirst direction and w4 expresses the shorter one of the width of theportion extending along the first direction of the portion and the widthof the portion extending along the second direction of the portionorthogonal to the first direction) satisfy the following formula,l4<lR=Min Space+2×ΔPPCw4<wR=k1λ/NA+1×ΔPPC

where lR and wR are fixed values determined by exposure condition,process condition, and process proximity effect correction condition,and Min Space denotes an allowable minimum space value in the designrule, Δ PPC denotes a minimum correction unit for the target portion ofmask pattern correction (corner section etc.) in the process proximityeffect correction, λ indicates exposure wavelength, NA indicatesnumerical aperture of the optical system of the exposure device, and k1denotes process factor.

The correction method for design data or mask data according to thepresent embodiment is preferably arranged so that the evaluation maskincludes at least one kind of a pattern selected from a group consistingof: (1) a plurality of H-shape crosslinking patterns; (2) a plurality ofcrank-type crosslinking patterns; (3) a plurality of projection pattern;and (4) a plurality of ring patterns, in each of the H-shapecrosslinking patterns, at least one of values of L1, W1, l1, and w1 isvaried within a range including a boundary value so that at least one ofboundary values of L1, W1, l1, and w1 can be found as the numericalparameter condition, where L1 expresses a size of the first polygonsection along a longitudinal direction of the first rectangular section,W1 expresses a size of the first polygon section along a width of thefirst rectangular section, l1 expresses a length of the firstrectangular section, and w1 expresses a width of the first rectangularsection, in each of the crank-type crosslinking patterns, at least oneof values of L2, W2, l2, and w2 is varied in a range including aboundary value so that at least one of boundary values of L2, W2, l2,and w2 can be found as the numerical parameter condition, where L2expresses a size of the second polygon section along a longitudinaldirection of the second rectangular section, W2 expresses a size of thesecond polygon section along a width of the second rectangular section,l2 expresses a length of the second rectangular section, and w2expresses a width of the second rectangular section, in each of theprojection patterns, at least one of values of L3, W3, l3, and w3 isvaried in a range including a boundary value so that at least one ofboundary values of L3, W3, l3, and w3 can be found as the numericalparameter condition, where L3 expresses a size of a main body of theprojection section along the longitudinal direction, W3 expresses a sizeof the main body along a width of the projection section, l3 expresses alength of the projection section, and w3 expresses a width of theprojection section, and in each of the ring patterns, each of a width ofa portion extending along a first direction of the ring portion and awidth of a portion extending along a second direction of the ringportion orthogonal to the first direction is constant, and at least oneof values of L4, W4, l4, and w4 is varied in a range including aboundary value so that at least one of boundary values of L4, W4, l4,and w4 can be found as the numerical parameter condition, where a longwidth l4 expresses the longer one of the width of the portion extendingalong the first direction of the ring portion and the width of theportion extending along the second direction of the ring portionorthogonal to the first direction, a short width w4 expresses theshorter one of the width of the portion extending along the firstdirection of the ring portion and the width of the portion extendingalong the second direction of the ring portion orthogonal to the firstdirection, L4 expresses a size of the opening along the long width, andW4 expresses a size of the opening along the short width.

The direct target value to be found in the foregoing method is the lowerlimits (boundary values) of l1 to l4 or w1 to w4, but these values maybe dependent on the values of L1 to L4 or W1 to W4. More specifically,the values of L1 to L4 or W1 to W4 may be set in some cases with noconsideration of the lower limits of l1 to l4 or w1 to w4; however, inother cases, the values of L1 to L4 or W1 to W4 need to be determined inconsideration of the lower limits, in which case the relationships amongthe values of L1 to l4 or w1 to W4 and the lower limits of l1 to l4 orw1 to w4 are expressed by relational expressions. Varying L1 or W1 infinding the boundary values of L1 or W1 can be effective.

The desired numerical parameter condition (DFM rule) to be set isrequired to prevent, in the H-type crosslinking pattern, particular linethinning of the crosslinked portion (l, w) on the PPC process of themask pattern, which brings the risk of line-breakage (critical). Thedesired numerical parameter condition (DFM rule) to be found is, for theH-type crosslinking pattern, at least one of the boundary values of L1,W1, l1 and w1. The boundary value corresponds to a lower limit of atleast one numerical ranges of L1, W1, l1, and w1 which can avoid therisk of line-breakage in consideration of process variation or margin.At least one of the lower limits of L1, W1, l1, and w1 can be foundaccording to the condition of line-breakage in the step of determiningparameter condition. Note that, the foregoing boundary value is supposedto be slightly greater than the lower limit of the design rule; that is,even when the boundary value cannot be found, it can be estimatedroughly by the lower limit of the design rule.

Further, the wording “varying within the range including the boundaryvalue” indicates setting of plural different values including a valuesmaller than the boundary value (lower limit of the numerical range) anda value greater than the boundary value (upper limit of the numericalrange).

In this method, by determining the numerical condition by accuratelyfinding a change of at least one of L1, W1, l1, and w1 in the vicinityof the boundary value, the pattern validation and pattern correction canbe carried out with high accuracy. This provides a certain advantage inrealizing a practical DFM.

The extraction of critical patterns of (1) to (4) in the criticalpattern extraction step may be performed as follows, for example.

More specifically, the extraction of critical patterns (1) and (2) isperformed as follows. First, micro rectangular (or polygonal) polygonswhose length is equal to or less than the length L and whose width isequal to or less than the width W is extracted by a CAD tool. Then, allmicro rectangular polygons among them in which the two opposed sides arein contact with larger polygons while the other two sides are not incontact with the larger polygons are extracted. Further, the extractionof critical pattern (3) is performed as follows. First, microrectangular (or polygonal) polygons whose length is equal to or lessthan the length L and whose width is equal to or less than the width Wis extracted by a CAD tool. Then, all micro rectangular polygons amongthem in which only one side of those is in contact with a larger polygonwhile other three are not are extracted. Note that, the extraction ofthe ring pattern (4) and the pectinate pattern (5) may be performed in asimilar manner as that for the patterns (1) to (3), which can be easilythought by a person in the art. The explanation thereof is thereforeomitted here.

Note that, extraction of polygon can be performed by synthesis or by(geometrically) resizing the layout using an existing CAD (DRC) tool.The series of (geometric) steps may be (generally) performed by a singleCAD tool. Extraction of micro projections equal to or less than thelength L and the width W using a CAD tool or the like is a commonconventional technology. However, the prevention of line thinning bylimiting the H-type or crank-type (geometric) patterns according to thecharacteristic after the PPC conversion in this example is not performedin the conventional PPC process.

In the foregoing correction method according to the present embodiment,the crosslinked portion may be increased in width or modified based onthe process variation or the margin condition. With this arrangement, asufficient process margin is ensured, unlike the conventional PPCcorrection which merely extracts a projection.

Note that, in the case of a polygon, such as a hexagon, “width”corresponds to a line width of the crosslinked portion (narrowest part).This is because the problem of the polygon is line-breakage, whichdepends on the length and the width (l and w) of this part.

In the case of using at least one of the patterns (1) to (5), thecorrection method for design data or mask data according to the presentinvention is preferably arranged so that the parameter includes a linewidth and a space, and the numerical parameter condition at least oneof: the line width numerical condition “line width is not less than thelower limit of line width and the space numerical condition “space isnot less than the lower limit of space”, and the plurality of patternsof the evaluation mask includes at least one of a pattern groupconstituted of patterns of varied line-widths in a numerical rangeincluding the lower limit of the line-width and a pattern groupconstituted of patterns of varied spaces in a numerical range includingthe lower limit of the space.

In the foregoing method, the evaluation mask has a spec allowingcalculation of the lower limit of the line width, and the lower limit ofthe space in the mask process (line width processing). In this method,the evaluation mask has a structure ensuring calculation of the lowerlimit on the photo process of these patterns or the lower limit afterthe etching, for example, the lower limit of the crosslinked portion (itindicates the portion with inadequate process accuracy of the mask inthis case) which becomes critical in the H-type pattern or in thecrank-type pattern. More specifically, the evaluation mask preferablyhas a spec with which the lower limits (guarantee limit) of L, W, l, andw can be estimated, for example, a spec in which the combinations of theL, W, l, w are varied with magnitude differences, and a plurality ofidentical patterns are provided in many portions in the same plane,which allows the variation evaluation of the mask process. Note that,the patterns (1) to (5) have specs for finding the lower limit for thephoto process on the wafer.

Note that, in the present invention, the plurality of pattern in theevaluation mask may have a structure (the details of the structure areomitted) for finding other critical (risky) pattern rules.

Further, in the present embodiment, the critical patterns (1) to (5) mayhave a spec useful for validation of mask processing accuracy. Morespecifically, validation of mask processing accuracy may be performed byusing the critical patterns (1) to (5). That is, the critical patternexpresses the worst case of the processing pattern. With this, bymeasuring a size error of the critical pattern (an error of the desiredsize), it is possible to find the maximum value (worst value) of thesize error. In this way, the mask processing accuracy can be validatedbased on the magnitude of the worst value.

The correction method for design data or mask data according to thepresent embodiment may be arranged so that, at or after the step (1),the design data or the mask data having been through the processproximity effect correction is corrected so as to satisfy at least oneof: numerical line-width condition such that “a line-width is not lessthan a lower limit of the line-width” and numerical space condition suchthat “a space is not less than a lower limit of the space”.

The correction in the correction step may be carried out with respect toa portion where the process margin decreases, extracted by calculationformula or simulation.

The correction method for design data or mask data according to thepresent embodiment may be arranged so that, before the step (1), thedesign data or the mask data having been through the process proximityeffect correction is corrected so as to satisfy at least one of:numerical line-width condition such that “a line-width is not less thana lower limit of the line-width” and numerical space condition such that“a space is not less than a lower limit of the space”.

A mask production method according to the present embodiment comprisingthe steps of: (i) correcting design data or lithography mask dataaccording to the correction method according to the present embodiment;and (ii) creating a lithography mask according to the design data or themask data having been corrected.

A semiconductor integrated circuit production method according to thepresent embodiment comprising the steps of: (i) forming a circuitmaterial layer for constructing a circuit; (ii) forming a resist on thecircuit material layer; (iii) exposing the resist using the mask; (iv)developing the resist exposed; and (v) etching the circuit materiallayer using a mask resulted from development of the resist, wherein theexposure is carried out with a mask produced by the mask productionmethod according to the present embodiment.

A correction system for design data or mask data according to thepresent embodiment is a system for correcting design (layout) data ordata of a lithography mask so that the lithography mask forms a desiredsize of circuit pattern through a microfabrication process, the systemcomprising: a proximity effect correction section for carrying outproximity effect correction with respect to the design data or thelithography mask data; an exposure device for exposing a resist using aevaluation mask and developing the resist exposed; a first measurementdevice for measuring a pattern size of the resist developed; a secondmeasurement device for measuring a pattern size of a circuit materialhaving been etched using the resist developed; a parameter numericalcondition determining section for determining parameter numericalcondition based on the pattern sizes of the resist and the circuitmaterial measured by the first and second measurement devices so as toprevent the design data or the mask data from being critical on processproximity effect correction; a critical pattern extraction section forextracting a pattern with a parameter not satisfying the foregoingnumerical condition from the design data or the lithography mask data asa critical pattern which becomes critical on process proximity effectcorrection; and a critical pattern correction section for correcting thedesign data or the mask data so that the critical pattern extracted havea parameter satisfying the foregoing numerical condition, wherein theevaluation mask is created in advance according to evaluation mask dataincluding plural patterns varied in parameter value, a part of which isa critical pattern which becomes critical on process proximity effectcorrection.

The correction system for design data or mask data according to thepresent embodiment preferably further comprises a correction portionoutput section for adding, to design data or lithography mask data,information of a portion corrected by the critical pattern correctionsection and outputting resulting lithography mask pattern data to adisplay device.

This structure saves the record of the correction portion as aninformation item after the correction is done, and exhibits the recordto the user, thereby allowing the user to confirm the correctionportion. More specifically, with this arrangement, the information ofthe portion corrected by the critical pattern correction section (usinga rule or simulation), such as the portion corrected so that the linewidth becomes equal to or greater than the lower limit, or the portioncorrected so that the space becomes equal to or greater than the lowerlimit, is added to the design data or mask data before the mask patterndata is outputted to the display device. On this account, it is possibleto display the portion corrected by the critical pattern correctionsection as an image of a distinctive color when the image of the maskpattern data is displayed in the display device. This allows the user toreceive a warning “there is a portion needs to be corrected”, andthereby enables the user to manually confirm the correction portion orto carry out validation.

Further, in the case where the design data or the mask data is polygondata including a plurality of layers, the correction portion outputsection may add other polygon data item indicating the correctionportion to the design data or the mask data as an additional layer tothe existing layer (a layer distinguished from the existing layer). Onthis account, the polygon data is displayed in the display device withthe layers clearly distinguished, and the user can find the correctionportion at a glance.

The left half of FIG. 20 shows an example of the flow of a displayoperation of the correction portion as a result of the foregoingcorrection portion output operation. In this example, the correctionportion output section adds a third layer for expressing a polygon(correction portion indicating polygon) indicating the correctionportion to a first layer expressing a polygon of a mask pattern beforethe correction and a second layer expressing a polygon of a mask patternafter the correction (these 3 layer are displayed in different colors,for example).

A validation system for design data or mask data according to thepresent embodiment is a system for carrying out validation as to whetherdesign data or lithography mask data includes a critical pattern whichbecomes critical on process proximity effect correction, in amicrofabrication process including a proximity effect correction stepfor carrying out process proximity effect correction with respect to thedesign (layout) data or the lithography mask data at least includingetching proximity effect correction, the validation being carried outbefore or after the proximity effect correction step, the systemcomprising: a proximity effect correction section for carrying outproximity effect correction with respect to design data or lithographymask data; an exposure device for exposing a resist using a evaluationmask and developing the resist exposed; a first measurement device formeasuring a pattern size of the resist developed; a second measurementdevice for measuring a pattern size of a circuit material having beenetched using the resist developed; a parameter numerical conditiondetermining section for determining parameter numerical condition basedon the pattern sizes of the resist and the circuit material measured bythe first and second measurement devices so as to prevent the designdata or mask data from being critical on process proximity effectcorrection; and a critical pattern extraction section for extracting apattern with a parameter not satisfying the foregoing numericalcondition from the design data or lithography mask data as a criticalpattern which becomes critical on process proximity effect correction,wherein the evaluation mask is created in advance according toevaluation mask data including plural patterns varied in parametervalue, a part of which is a critical pattern which becomes critical onprocess proximity effect correction.

The foregoing system may be a single piece of tangible device(semiconductor device), or may be a plurality of devices connected via anetwork to carry out the operation in association (through dataexchange). Further, the system may be constituted of software andhardware (computer) which carry out an operation in association. In thiscase, both a single software item or plural associated software itemsmay be used as the software for causing a computer to function as therespective means of the system.

A correction method for design data or mask data according to thepresent embodiment is a mask pattern data correction method comprisingthe steps of: (i) a first measurement step for carrying out an exposureexperiment for exposing and developing a resist using an evaluationmask, and measuring a shape of the resist developed; (ii) a secondmeasurement step for etching a circuit material using the resistdeveloped and measuring a pattern size of the circuit material after theetching; (iii) a first estimation step for estimating a shape of theresist developed according to data of the evaluation mask by acalculation formula or by simulation; (iv) a second estimation step forestimating a shape of the circuit material etched according to data ofthe evaluation mask by a calculation formula or by simulation; (v) afitting step for changing a parameter of the calculation formula or aparameter for the simulation based on comparison between the shapes ofthe resist and the circuit material measured by the first and secondmeasurement steps and the shapes of the resist and the circuit materialcalculated in the first and second estimation steps so as to fit thecalculation formula or the simulation to measurement results of thefirst and second measurement steps; and (vi) a proximity effectcorrection step for carrying out another estimation of a shape of theresist and a shape of the circuit material according to the calculationformula or the simulation having been modified in the step (v) andcarrying out process proximity effect correction of mask data based onthe shape of the resist and the shape of the circuit material estimatedin said another estimation, wherein the evaluation mask includes apattern which is assumed to be critical on the process proximity effectcorrection based on the shape of the resist and the shape of the circuitmaterial having been estimated in the steps (iii) and (iv).

With the foregoing method, unlike the process proximity effectcorrection of the conventional empirical fitting model, the evaluationmask includes a pattern which is assumed to be critical on theconventional process proximity effect correction. On this account,estimation by the foregoing calculation formula or simulation(lithography, etching/simulation etc.) may be fitted to the measurementresult more accurately than the method of the conventional empiricalfitting model. Therefore, the process proximity effect correction may becarried out more securely and accurately than the process proximityeffect correction of the conventional empirical fitting model.

Note that, the pattern which is assumed to be critical on the processproximity effect correction based on the resist shape estimating in theforegoing estimation step is a pattern having a specific shape which isassumed to be critical on a common conventional process proximity effectcorrection. Specifically, the pattern is (1) the H-type crosslinkingpattern, (2) the crank-type crosslinking pattern, (3) the projectionpattern, (4) the ring pattern, or (5) the pectinate pattern. Such apattern is not used in the process proximity effect correction accordingto the conventional empirical fitting model.

As described, the present embodiment thus provides correction method andcorrection system for design data or mask data, validation method andvalidation system for design data or mask data for ensuring the processspec (including the process margin) after a PPC process. With theassurance of the process spec, the present invention prevents wastes incost and development period due to mask design data correction, maskreproduction, and an extra process evaluation after the microfabricationprocess. The present embodiment also provides a yield estimation methodfor semiconductor integrated circuit, a method of improving design rule,a mask production method, and a semiconductor integrated circuitproduction method using the correction method, the correction system,the validation method and the validation system.

Outline of the Method of the Present Embodiment

First of all, the following explains outline of design data or mask datavalidation method and correction method and a method of improving designrule according to the present embodiment.

The validation method for design data or mask data according to thepresent embodiment is a method of correcting pattern data of alithography mask so that the mask forms a desired size of circuitpattern through a microfabrication process. The mask pattern datavalidation method according to the present invention comprising thesteps of (i) carrying out proximity effect correction with respect todesign data or mask data; a first measurement step for exposing a resistusing evaluation mask data including plural patterns varied in parametervalue, a part of which is a critical pattern which becomes critical onprocess proximity effect correction, developing the exposed resist, andmeasuring the pattern size of the developed resist; (ii) a secondmeasurement step for etching a circuit material using the developedresist, and measuring the pattern size of the circuit material after theetching; (iii) determining parameter numerical condition for preventingthe design data or the mask data from being critical on processproximity effect correction, based on the pattern size of the resist andthe circuit material measured in the first and second measurement steps;and (iv) extracting a pattern with a parameter satisfying the foregoingnumerical condition from the design data or the mask data as a criticalpattern which becomes critical on process proximity effect correction.

In a preferred embodiment of the validation method, the evaluation maskused for parameter condition determining step (correction rule, modelextraction TEG) includes a plurality of critical patterns with which theprocess margin becomes the smallest, in addition to a pattern densitydependency evaluation pattern used for conventional PPC model extractionTEG or a size linearity evaluation pattern. The plurality of criticalpatterns with which the process margin becomes the smallest at leastincludes a H-type crosslinking pattern, a crank-type crosslinkingpattern, a ring pattern, and a projection pattern. In the correctionrule extraction, the correction rules (eg. lower limit of line-width andspace lower limit) or the constraint models of these patterns areextracted based on wafer evaluation results of these patterns, andrestriction in the PPC process is determined.

This method enables extraction of a portion (pattern) becomes criticalon process proximity effect correction which was not found byconventional simulation validation or simulation-based critical portioncheck.

In the correction method of design data or mask data according to thepresent invention, the process proximity effect correction with respectto the design data or the mask data is carried out as follows. After aportion which becomes critical on process proximity effect correction(critical pattern) is extracted in a similar manner to the describedvalidation method, the layout according to already-designed design data(layout data) or mask data is corrected by removing a critical pattern.With this operation, it is possible to obtain design data or mask datanot including a portion which becomes critical on process proximityeffect correction.

In a method of improving design rule according to the presentembodiment, extraction result of critical insecure portion is reflectedto the design rule applied in the designing of (LSI) circuit patternafter the first (LSI) mask creation using the correction method andbefore the second (LSI) mask creation, and the design rule is thuscorrected. With this operation, a mask pattern including a criticalpattern for the process proximity effect correction is not used indesigning. More specifically, design parameters are restricted using thedesign rule as a design basic so as to exclude the portion which becomescritical on process proximity effect correction. In this way it ispossible to avoid in the next designing (layout) of a mask pattern as acircuit pattern including a portion which becomes critical on processproximity effect correction (a mask pattern before the process proximityeffect correction). On this account, it is not necessary in the nextdesigning to carry out mask pattern correction with respect to theportion which becomes critical on process proximity effect correctiononce the mask pattern is designed.

Note that, if extraction of critical portion is possible at the stage ofprocess TEG or circuit TEG before the LSI designing, the design rule canbe reconsidered, and the first LSI mask data can be reflected. If theprocess condition and the characteristic target are clarified at thestage of process TEG or circuit TEG, the critical pattern due to theshape can be found in advance by checking all the variations of pattern.

On this account, it is possible to greatly reduce development cost anddevelopment period of PPC mask data creation, validation, mask creation,and photo evaluation process.

Further, according to the present embodiment, in the PPC process duringthe mask pattern correction for setting the resist pattern on the waferto a desired size in the process of producing mask pattern data for usein manufacturing of a semiconductor element and a liquid crystalelement, the rule (numerical condition of parameter; DFM rule) forextracting the critical pattern is determined using a TEG mask includinga critical pattern which becomes critical (the process margin in a photoor etching process becomes small) in the PPC process. The criticalpattern is then extracted based on the rule.

It is preferable to use a mask including a pattern for extracting atleast the four kinds of numerical pattern size (parameter) condition forthe H-type crosslinking pattern, the crank-type crosslinking pattern,the ring pattern, and the micro projection pattern as the TEG mask, andthe smallest line width and the smallest space are found as a rule(numerical condition of parameter) for extracting a critical pattern.

Further, in the correction method according to the present embodiment, arule or a model (numerical condition of parameter) for extracting thecritical pattern is reflected to the PPC process. For example, the PPCprocess is carried out with reference to the values of the smallest linewidth and the smallest space.

On this account, it becomes possible to extract and correct an insecureportion (insecure portion with a critical process margin) which is notable to be detected by the conventional simulation-based validationmethod. On this account, reproduction of mask and change in layout dueto inadequate detection by the conventional simulation validation, whichmissed out such an insecure portion, are not necessary. This reduces thedevelopment cost and the development period.

The method of improving design rule according to the present embodimentreflects the rule (numerical condition of parameter) for extracting acritical pattern to the design rule. On this account, it is possible togreatly reduce the development cost and development period ofmicrofabrication process. Further, the rule (numerical condition ofparameter) for extracting a critical pattern can be directly reflectedto the next mask data creation.

One Embodiment of the Method

With reference to FIG. 1B, the following explains a mask patterncreation method according to one embodiment.

First, before the user extracts a correction rule (or a model), criticalpattern extraction TEG (Test Element Group) mask pattern data isprepared (S0). The TEG mask pattern data includes a pattern whichbecomes critical on process proximity effect correction (criticalpattern) and a pattern which does not become critical on processproximity effect correction. In FIG. 7( a) to FIG. 7( e), and FIG. 8, anexample of TEG mask pattern (extraction TEG OPC critical pattern) isshown. Note that, the step S0 also carries out DRC and LVS regarding TEGpattern.

The TEG mask pattern data is a pattern causing risk of line-breakage orshort-circuit on the process proximity effect correction. Further, asthe pattern which becomes critical on process proximity effectcorrection and the pattern which does not become critical on processproximity effect correction, the critical pattern extraction TEG maskincludes a pattern which cannot be corrected sufficiently by theconventional process proximity effect correction (PPC) (hereinafterreferred to as a critical pattern), such as H-type crosslinking pattern,crank-type crosslinking pattern, projection pattern, ring pattern, or apectinate line and space pattern (short check pattern). The TEG maskpattern data is general-purpose pattern data. More specifically, the TEGmask pattern data is applicable to various kinds of mask pattern data.

In FIG. 7( a) to FIG. 7( e), a concrete example of the pattern whichbecomes critical on process proximity effect correction included in thePPC model extraction TEG mask is shown. FIG. 7( a) shows a H-typecrosslinking pattern, FIG. 7( b) shows a crank-type crosslinkingpattern, FIG. 7( c) shows a micro projection pattern, FIG. 7( d) shows aring pattern, and FIG. 7( e) shows a pectinate line and space pattern(short check pattern).

Preferably, the TEG mask at least includes a H-type crosslinkingpattern, a crank-type crosslinking pattern, a projection pattern, and aring pattern.

Note that, as shown in FIG. 7( a) and FIG. 14( a), the H-typecrosslinking pattern at least constituted of a first rectangularsection, and two first polygon sections between which the firstrectangular section is caught. The two first polygon sections are incontact with the respective two short-length sides of the firstrectangular section. The two ends of the respective sides of the firstpolygon section in contact with the short-length sides of the firstrectangular section each extend outward the short-length sides of thefirst rectangular section. Further, as shown in FIG. 7( b) and FIG. 14(c), the crank-type rectangular pattern at least constituted of a secondrectangular section, two second polygon sections (rectangular sectionsin this example) between which the second rectangular section is caughtand another section. One side of the two second polygon sections are incontact with the respective two short-length sides of the secondrectangular section. One end of the respective sides of the secondpolygon sections in contact with the short-length sides of the secondrectangular section each extend outward the short-length sides of thesecond rectangular section, to be opposite to each other with respect tothe second rectangular section. Further, as shown in FIG. 7( c) and FIG.14( e), the projection pattern at least constituted of a rectangularprojection section and a polygon main body in contact with one of theshort-length sides of the projection section. Two ends of the side ofthe polygon main body in contact with the short-length side of theprojection section each extend outward the short-length side of theprojection section. As shown in FIG. 7( d), the ring pattern is apattern having a rectangular opening.

As a critical shape pattern, the TEG mask includes the first and secondcritical shape pattern groups. The first critical shape pattern groupconsists of a plurality of patterns, each of which includes a criticalshape (such as a H-type crosslinking pattern, a crank-type crosslinkingpattern, or a micro projection pattern) easily causing line-breakage.The plurality of patterns are varied only in line width, and may causeline-breakage on process proximity effect correction when their linewidths are excessively narrow. Further, the second critical shapepattern group consists of a plurality of patterns, each of whichincludes a critical shape (such as a ring pattern, a pectinate line anda space pattern) easily causing short-circuit. The plurality of patternsare varied only in space, and may cause short-circuit on processproximity effect correction when their spaces are excessively small.

Next, wafer evaluation is performed with an extraction TEG (S1),extraction of critical pattern extraction rule (or a model) andcorrection rule (or a model) is performed based on the wafer evaluationresult (S2), and extraction of critical pattern is performed based onthe critical pattern extraction rule using a DRC tool (S3). In thiscase, the steps S1 and S2 are basically carried out once, and the ruleextracted in the step S2 is used for the various LSIs. Note that, therule extraction method in the step S2 will be explained later as anexample of a H-type crosslinking pattern with reference to FIG. 23 (a).Further, the DFM rule related to the step S3 will be explained later inFIG. 14, FIG. 15, and FIG. 16( a) to FIG. 16( c).

First of all, in the steps S1 and S2, a mask is actually created inaccordance with the TEG mask pattern data, and wafer evaluation of thismask is performed under a required process (S1). More specifically, witha TEG mask including the first critical shape pattern group and thesecond critical shape pattern group, a resist formed on a wafer(substrate) is exposed under exposure condition of the said process. Theresist is then developed under the required development condition, and acircuit material is etched using the developed resist. Next, with ascanning electron microscope (SEM), the user captures an image of aplurality of resist patterns obtained by the exposure and developmentand a plurality of etched circuit material patterns, and checksoccurrence of line-breakage of the resist in the first critical shapepattern, and occurrence of short-circuit of the resist in the secondcritical shape pattern (wafer evaluation).

The TEG mask used for creation of correction rule preferably includes atleast one of (1) a plurality of H-shape crosslinking patterns; (2) aplurality of crank-type crosslinking patterns; (3) a plurality ofprojection pattern; and (4) a plurality of ring patterns. In each of theH-shape crosslinking patterns, at least one of values of L1, W1, l1, andw1 is varied within a range including a boundary value so that at leastone of boundary values of L1, W1, l1, and w1 can be found as thenumerical parameter condition. L1 expresses a size of the first polygonsection along the longitudinal direction of the first rectangularsection, W1 expresses a size of the first polygon section along thewidth of the first rectangular section, l1 expresses a length of thefirst rectangular section, and w1 expresses a width of the firstrectangular section. In each of the crank-type crosslinking patterns, atleast one of the values of L2, W2, 12, and w2 is varied in a rangeincluding a boundary value so that at least one of boundary values ofL2, W2, l2, and w2 can be found as the numerical parameter condition. L2expresses a size of the second polygon section along the longitudinaldirection of the second rectangular section, W2 expresses a size of thesecond polygon section along a width of the second rectangular section,l2 expresses a length of the second rectangular section, and w2expresses a width of the second rectangular section. In each of theprojection patterns, at least one of the values of L3, W3, l3, and w3 isvaried in a range including a boundary value so that at least one ofboundary values of L3, W3, l3, and w3 can be found as the numericalparameter condition. L3 expresses a size of the main body along thelongitudinal direction of the projection section, W3 expresses a size ofthe main body along the width of the projection section, l3 expresses alength of the projection section, and w3 expresses a width of theprojection section. In each of the ring patterns, each of the width ofthe portion extending along the first direction of the ring portion andthe width of the portion extending along the second direction of thering portion orthogonal to the first direction is constant, and at leastone of the values of L4, W4, l4, and w4 is varied in a range including aboundary value so that at least one of boundary values of L4, W4, l4,and w4 can be found as the numerical parameter condition. A long widthl4 expresses the longer one of the width of the portion extending alongthe first direction of the ring portion and the width of the portionextending along the second direction of the ring portion orthogonal tothe first direction. A short width w4 expresses the shorter one of thewidth of the portion extending along the first direction of the ringportion and the width of the portion extending along the seconddirection of the ring portion orthogonal to the first direction. L4expresses a size of the opening along the long width. W4 expresses asize of the opening along the short width. More preferably, the TEG maskincludes all of (1) to (4).

As shown in FIG. 16( c), the TEG mask may be a mask including aplurality of micro projection patterns with varied values of A3, B3, l3,and w3 in which a size of the main body along the longitudinal directionof the projection section is 1.0 μm, where A3 and B3 express a size ofthe main body along the width of the projection section, l3 expresses alength of the projection section, and w3 expresses a width of theprojection section.

An examples of the TEG mask may be a mask resulted from PPC process ofthe mask shown in FIG. 7( a) to FIG. 7( e) in which the size parametersare varied. FIG. 9( a) to FIG. 9( j) show ten patterns extracted fromactual LSI patterns having been through the PPC process. These patternsbelong to the ring pattern group of (4) above. More specifically, thecritical patterns included in this mask are mixed types of the (4) ringpattern, and either of the (1) H-type crosslinking pattern or the (2)crank-type pattern. The mask in this example includes a plurality ofpatterns (n patterns) with varied values of L, W, l, and w on the typebasis (10×n in total). It should be noted that this is a concreteexample. Each pattern size value ((L. W, l, w) is regulated by theprocess accuracy and the design rule. Since the constant number to befound is a boundary value of line-breakage or short-circuit, itautomatically is a value in the vicinity of the lower limit of thedesign rule and the minimum value of the line or the space. Therefore,the TEG pattern is created with varied pattern sizes in a range aroundthe foregoing value and includes the minimum value.

Next, the user or the system determines a critical pattern extractionrule according to the check result of S1 (wafer evaluation result) (S2).The critical pattern extraction rule is numerical parameter conditionwhich causes a pattern to be critical when the pattern is subjected toprocess proximity effect correction. In this example, the criticalpattern extraction rule includes numerical line-width condition suchthat “the line-width is not less than the lower limit” with whichline-breakage may occur on process proximity effect correction, andnumerical space condition such that “the space is not less than thelower limit” with which short-circuit may occur on process proximityeffect correction.

For the H-type crosslinking pattern of FIG. 7( a), the critical patternextraction rule is set such that “the length l1 and the width w1 of thefirst rectangular section satisfy the following inequality”.l1<280 nm−2×ES(l1j)w1<240 nm−2×ES(w1j)

ES(l1 j) and ES(w1 j) respectively indicate estimated etching shiftamounts (amount of size variation due to the etching shift) of thelength l1 and the width w1 of the first rectangular section of theH-type crosslinking pattern. As described above, ES(l1 j) and ES(w1 j)are found by back calculation. l1 j and w1 j are variables of etchingshift dependant on the space to the proximal pattern and the patterndensity in the neighborhood.

ES(l1 j) and ES(w1 j) can be found by a rule. If a rule is applied, theES(l1 j) and ES(w1 j) are several discontinuous constituents. Functionsor models may be applied instead of the rule.

Further, for the opened rectangular pattern shown in FIG. 7( d), thecritical pattern extraction rule is set such that “the length l4 and thewidth w4 of the third rectangular section satisfy the followinginequality”.l4<280 nm−2×ES(l4j)w4<240 nm−2×ES(w4j)

The opened rectangular pattern is a line-breakage risk pattern at leastconstituted of a third rectangular section and two third polygonsections (rectangular sections in this example) between which the thirdrectangular section is caught. One side of the two third polygonsections are in contact with the respective two short-length sides ofthe third rectangular section. One end of the respective sides of thethird polygon sections in contact with the short-length sides of thethird rectangular section each extend outward the short-length sides ofthe third rectangular section. The ends extend outward are opposedwithout having the third rectangular section inbetween.

As shown in FIG. 7( b), for the crank-type crosslinking pattern, thecritical pattern extraction rule is set such that “the length l2 and thewidth w2 of the second rectangular section satisfy the followinginequality”.l2<280 nm−ES(l2j)w2<240 nm−2×ES(w2j)

Further, as shown in FIG. 7( c), for the projection pattern, thecritical pattern extraction rule is set such that “the length l3 and thewidth w3 of the third rectangular section satisfy the followinginequality”.l3<280 nm−ES(l3j)w3<240 nm−2×ES(w3j)

Further, the user or the system determines a critical pattern extractionrule according to the check result of S1 (wafer evaluation result) (S2).In this step, the user or the system first determines, for each shape ofthe first critical shape pattern, a minimum line width “Wmin” with whichline-breakage of the first critical shape pattern is prevented afterprocess proximity effect correction according to the check result of S1(wafer evaluation result). More specifically, the minimum line width“Wmin” to be found is not a single number but a group of plural ruleswhich number is equal to the number of all possible combinations of theshape of the first critical shape pattern and the corresponding minimumline widths “Wmin”. The minimum line width “Wmin” is found for eachshape of the first critical shape pattern. For example, it is found as“Wminh” in the H-type crosslinking section, and found as “Wminc”(different from “Wminh”) in the crank-type. Further, the user or thesystem determines, for each shape of the second critical shape pattern,a minimum space “Smin” with which short-circuit of the second criticalshape pattern is prevented after process proximity effect correctionaccording to the check result of S1 (wafer evaluation result). Also inthis case, the minimum space “Smin” to be found is not a single numberbut a group of rules which number is equal to the number of all possiblecombinations of the shape of the second critical shape pattern and thecorresponding minimum space “Smin”. The minimum space “Smin” is foundfor each of the second critical shape pattern. For example, it is foundas “Sminr” in the ring section, and found as “Smins” (different from“Sminr”) in the short-check-type pattern portion. Next, the user or thesystem creates a first correction rule (correction rule for preventingline-breakage) based on the minimum line width “Wmin” (rule) found foreach shape of the first critical shape pattern, and also creates asecond correction rule (correction rule for preventing short-circuit)based on the minimum space “Smin” (rule) found for each type of thesecond critical shape pattern. The first and second correction rules arestored in a correction rule storage section. The first correction ruleis not a single number but a group of plural rules of “the line width ofthe first critical shape pattern of the mask is not less than theminimum line width “Wmin”” which number is equal to the number of theshapes. For example, the first correction rule includes, regarding theH-type crosslinking pattern (H-type crosslinking section), a correctionrule “the minimum line width is not less than Wminh in the H-typecrosslinking pattern portion of the mask when L is equal to or less thanα”, and, regarding the crank-type crosslinking pattern, a correctionrule “the minimum line width is not less than Wminc in the crank-typecrosslinking pattern portion of the mask when L is equal to or less thanα”. The second correction rule is not a single number but a group ofplural rules of “the space of the second critical shape pattern of themask is not less than the minimum space Smin” for each of the criticalshape pattern, which number is equal to the number of the shapes of thesecond critical pattern. For example, the second correction ruleincludes, regarding the ring pattern, a correction rule “the minimumspace is not less than Sminr in the ring pattern portion of the maskwhen Ls is equal to or less than β”, and, regarding the short-check-typepattern, a correction rule “the minimum space is not less than Smins inthe short-check-type pattern portion of the mask when Ls is equal to orless than β”.

The following explains a method of the step S2 for extracting the firstcorrection rule and the second correction rule according to themeasurement result of PPC model extraction TEG.

Typically, the TEG pattern having respective parameter sizes of thecritical pattern (L, W, l, and w in this case) are first subjected towafer evaluation, and the respective parameters satisfying the processspec (including the process margin) are associated with wafer evaluationresults. For example, this may be realized as a rule which isconstituted of functions or tables. In this manner, the first correctionrule and the second correction rule are created (calculated) ascorrection formulas of specific values.

For example, the created first correction rule (equation rule) is a rulefor specifying the line width and length, which is set such that,assuming of a 130 nm flash MR layer, “a pattern in which the line widthW (w1, w2, w3, w4, or w5; see FIG. 3( a) to FIG. 3( e)) is constant, andthe length of the straight line section (l1, l2, l3, l4, or l5; see FIG.3( a) to FIG. 3( e)) is L satisfies L≧280 nm−a×ES (lij) (i is an integerranging from 1 to 5; a=2 in the case where i=1, i=4, or i=5, a=1 in thecase where i=2, or i=3) or W≧240 nm−2×ES (wij)” (see FIG. 14). Notethat, the line width/length rule is more commonly expressed as:L≧α−a×ES(lij) or W≧β−b×ES(wij)

where α and β are process inherent values. α and β may be found by usinga table showing a relationship between a combination of L and W andwafer evaluation result (Good or NG).

This line width/length rule may be added to the design rule as a DFMrule shown in the table of FIG. 17. ES (lij) and ES (wij) denote etchingshift amounts, l1 j and w1 j are variables of etching shift dependant onthe space to the proximal pattern and the pattern density in theneighborhood. i denotes a type out of (a) to (e). j denotes a rule or amodel dependant on the proximal pattern and the pattern density in theneighborhood.

In the case of the 130 nm flash MR layer, the created first correctionrule (equation rule) may be a micro level-difference rule such that “atleast one of the two sides connected to an arbitrary apex is not lessthan 180 nm−ES (Lsn)” (see FIG. 15). Note that, this microlevel-difference rule is more commonly expressed as:Lside1≧γ−ES(lsn) or Lside2≧σ−ES(lsn)

where γ and σ are values dependent on the process or PPC, or relativevalues to Lside 3.

ES (Lsn) denotes an etching shift amount of the length L side 1 and Lside 2 connected to an arbitrary apex. As with ES (l1 j) and ES (w1 j),ES (Lsn) is found by back calculation. Lsn is a variable of etchingshift dependant on the space to the proximal pattern and the patterndensity in the neighborhood.

In FIG. 17, ES(L1 ij) and ES(L2 ij) denote etching shift amounts, and idenotes a type out of (a) to (e). l1 j and w1 j are variables dependenton the space to the proximal pattern and the pattern density in theneighborhood. j denotes a rule or a model dependant on the proximalpattern and the pattern density in the neighborhood.

Each of the micro level-difference patterns shown in FIGS. 16( a) and(b) is a pattern in which a straight-line portion with a constant linewidth A is coupled with a polygon whose size along the width of thestraight-line portion is longer than the straight-line portion. One orboth ends of an elementary part (an end coupled with the rectangularsection) of the straight-line portion is provided with a rectangularsection (level-difference section) having a length LS (a lengthcorresponding to the longitudinal direction of the straight-lineportion) and a width WS (a width corresponding to the width direction ofthe straight-line portion; level-difference value). A degree ofdepression (the degree of reduction in width of the level-differencesection shown in FIGS. 16( a) and 16(b)) on PPC process of a TEG,including a plurality of micro level-difference patterns with variedvalues of LS, WS, and A, each of which has the foregoing structure, isevaluated. In this way, a condition with a non-critical result can beextracted as a micro level-difference rule. The way of varying LS, WS,and A may be such that LS is varied with a 5 nm interval in a range of20 to 200 nm, WS is varied with a 5 nm interval in a range of 5 to 50nm, A is set to 180 nm, and S (space not shown) is set to 500 nm. Themicro level-difference rule may be added to a design rule as a DFM rule.

Further, the created second correction rule may be a simple rule such asa rule “the line width of the amendment portion is limited to 90 nm orgreater (in view of mask processing accuracy)”.

Further, the extraction method of the second correction rule “the spaceof the critical pattern of the mask is set to be larger than the minimumspace” according to the measurement result of the PPC model extractionTEG mask including a ring pattern, a short-check-type pattern or thelike is similar to the extraction method of the first correction rule.The second correction rule creates a relational expression based on acondition whether short-circuit occurs with the process spec (includingprocess margin)”.

As to specific correction rules, such as a line width rule “the linewidth of the amendment portion is limited to 90 nm or greater in aH-type crosslinking pattern”, a line width/length rule “a pattern inwhich the line width W is constant, and the length of the straight linesection is L satisfies L≧280 nm−a×ES(lij) (i is an integer ranging from1 to 5; a=2 in the case where i=1, i=4, or i=5, a=1 in the case wherei=2, or i=3) or W≧240 nm−2×ES(wij)” (see FIG. 14), or a microlevel-difference rule “at least one of the two sides connected to anarbitrary apex is not less than 180 nm−ES(Lsn)” (see FIG. 15), theextraction methods are not specifically explained. The following howeverexplains outline of the methods. In a general PPC process, the maskpattern data after the PPC process is found from the layout design data(circuit pattern data). However, in this example, the size of the PPCpattern is calculated first, and the design pattern (size) for obtainingthe size of the PPC pattern is found by back calculation. Thecalculation method of design pattern is basically the same both in thecase of rule-base correction and in the case of simulation-basecorrection.

In the step S2, the parameter of simulation is modified so as to fit thesimulation result to the measurement result based on a comparisonbetween the measurement result of PPC model extraction TEG mask and thesimulation result of the PPC model extraction TEG mask pattern data(fitting process). Then, in the process proximity effect correction ofthe later-described step S6, the simulation is carried out with themodified parameter.

Note that, the correction rule extraction through the steps S0 to S2 isbasically required only once for each process applied.

Next, a critical pattern is extracted (S3). More specifically, based onthe critical pattern extraction rule obtained by the wafer evaluation ofthe TEG mask (S2, S3), the portion of the pattern (critical pattern) inwhich line-breakage or short-circuit is likely to occur in a portioncorresponding to the wire portion of the resist when the resist issubjected to exposure and development using a mask having been throughthe later-described PPC correction (S6) is extracted from the actual LSIdesign data as uncorrected mask pattern data. DRC and LVS with respectto the LSI design data are carried out immediately before the step S3 orat the time of extraction.

The portion of critical pattern is a region (critical region) in whichline-breakage or short-circuit occurs on the PPC correction (criticalregion). At this time, back calculation is performed based on the PPCmodel or rule extracted from the TEG wafer result.

FIG. 24 shows a concrete example of PPC pattern calculation formula(non-patent Document 2 (a PPC flow of A. Sezginer, F. X. Zach, et al.“Process-window-aware-RET and OPC”, SPIE Symposium, San Jose, Vol. 6156,No. 615613, recently completed volumes, 2006). In the existing PPC, theetching shift amount is first found by back calculation, and a PPCpattern is found as a OPC pattern target based on the design layout datathrough calculation of optical projection image (on a wafer) using theetching shift amount as a OPC pattern target. Since the details ofcalculation formula is described in the non-patent Document 2, theexplanation is omitted here.

In the step S3, the size of PPC pattern is first defined, and the designpattern (size) for obtaining the size of PPC pattern is then found byback calculation. The method of calculating the design pattern isbasically the same both in the case of rule-base correction and in thecase of simulation-base correction.

Note that, the step S3 is the same as the step of extracting a regionrequiring the conventional process proximity effect correction (eg. thestep of extracting a critical region requiring the process proximityeffect correction of Patent Document 8 (Japanese Unexamined PatentPublication Tokukai 2004-354919)). In the present invention, a patternlikely to be critical after the PPC process as shown in FIG. 14, FIG.15, and FIG. 16( a) to FIG. 16( c) is detected (checked) in advance, andis corrected if necessary. With this method, the problem ofline-breakage or short-circuit after the PPC process, after the maskcreation, after the photo process, or after the etching can beeliminated.

The extraction of the critical pattern in the step S3 can be carried outat full-chip level using a CAD tool ((DRC: Design Rule Check) tool) orthe like. More specifically, in the case of extracting a H-typecrosslinking pattern or a crank-type crosslinking pattern, theextraction is performed by first extracting all micro rectangularpolygons in which the long-side length L satisfies 280 nm−2×ES (l1 j)and the short-side length W satisfies 240 nm−2×ES (w1 j), and thendetecting all micro rectangular polygons among them in which the twoopposed sides are in contact with larger polygons while the other twosides are not in contact with the larger polygons. However, in the caseof a micro projection, a rectangular in which only one side of those isin contact with a larger polygon while other three are not is detected(see FIG. 14). This detection/extraction is carried out from the maskpattern data of the entire chip using a CAD tool or the like.

Similarly, the micro level-difference rule is found by extracting microrectangles in which arbitrary sides are not more than 180 nm−ES(Lsn) andthen, among the detected micro rectangles, detecting rectangles in whichan arbitrary side is not more than 180 nm−ES(Lsn) and the two adjacentsides are in contact with larger polygons while the other two sides arenot in contact with the larger polygons (see FIG. 15).

This is a basic pattern, but there are many combinations andmodifications of this pattern in the actual LSI. FIG. 9( a) to FIG. 9(j) show layout pattern examples.

Next, judgment is carried out as to whether the LSI design data containsa critical pattern depending on the extraction result of a criticalpattern in the step S3 (S4).

If the step S4 finds that the LSI design data contains a criticalpattern, the critical pattern in the LSI design data is correctedaccording to a correction rule determined in the step S3.

Next, the LSI design data, which is an uncorrected mask pattern data, issubjected to process proximity effect correction, and mask pattern data(after the process proximity effect correction) is created (S6). Theprocess proximity effect correction in S6 is preferably performed by amethod of determining parameters of simulation or calculation formulaused for process proximity effect correction based on the waferevaluation of a TEG mask including a pattern which is assumed to becritical after the process proximity effect correction using thelater-described empirical fitting model, and carrying out processproximity effect correction using simulation or calculation formula withthe parameters. With this method, process proximity effect correctioncan be performed with high accuracy. On this account, the steps S2 to S5may be omitted.

Next, the first validation is performed by checking correction sizeaccuracy (checking whether the error of the target value is within therange of spec) with respect to the mask pattern data after the processproximity effect correction, which is obtained in S6 (S7). Apublicly-known validation method can be used for this validation. Thereare two kinds of publicly-known validation method. One method is calledCAD validation which determines the presence of defect portion (shortageor extra, micro line or slit) in comparison (finding the difference)with the data before the PPC process. Another method is calledsimulation validation which carries out simulation at full-chip level,calculates the resist pattern, and checks an error of the target size,defocus, or size variation (margin) under variation of exposure amount.

This may also be performed effectively by detecting a pattern, which isassumed to be critical on the PPC process according to the firstcritical pattern extraction rule (for preventing line-breakage)extracted by the foregoing TEG, from the PPC pattern having been throughthe process proximity effect correction, and checking the presence of aportion which becomes critical on the PPC process. More specifically, inthe case of a PPC pattern having been through the process proximityeffect correction, for example, in the case of a H-type crosslinkingpattern or a micro projection pattern, any polygon not more than wHUL inwidth and not less that lHUL in length is extracted. Among the extractedpolygons, a first critical pattern (for preventing line-breakage) isdetected. The first critical pattern has a structure such that the twoopposed sides are in contact with other larger polygons while the othertwo sides are not in contact with the larger polygons, or such that onlyone side of those is in contact with another larger polygon while otherthree are not. This step is the same also for a crank pattern or otherpatterns.

Further, this may also be performed effectively by detecting a pattern,which is assumed to be critical on the PPC process according to thesecond critical pattern extraction rule (the second critical pattern forpreventing short-circuit) extracted by the foregoing TEG, from the PPCpattern having been through the process proximity effect correction, andchecking the presence of a portion which becomes critical on the PPCprocess.

In this case, the block for carrying out the step of S7 may bestructured such that some kind of indication (flag, polygon etc.) of adefect portion detected by the publicly-known method or extractedaccording to the critical pattern extraction rule based on the waferevaluation of the TEG mask is added to the mask pattern data after theprocess proximity effect correction, which is transmitted to the blockperforming the step S8, the block performing the step S9, or to thedisplay device as another layer of design stream data. This is toefficiently perform the steps of the next determination process (S8) andcorrection process (S9). However, if the determination standard, thecorrection procedure, and the rule are appropriately set, automaticoperation by a CAD tool or the like is possible.

For the defect portion detected by the CAD validation or the simulationvalidation in the foregoing validation process (S7), second validationis generally carried out at the same time of extraction so as to checkwhether the process margin is equal to or more than the reference value.Necessity of correction is determined according to the result of thefirst validation (S7) and the result of this second validation. Morespecifically, the necessity of correction is determined depending onwhether the error is within the spec or the process margin is equal toor greater than the reference value. Note that, the validation(correction validation) is divided into the first validation and thesecond validation in this example for the sake of convenience. The firstvalidation and the second validation may be carried out at the sametime, or sequentially in a desired order.

According to this determination result, the next pattern correctionprocess (S9) is carried out.

Next, pattern data correction is carried out (S9) with respect to thedefect portion where correction is regarded necessary according to thedetermination result of the foregoing determination step (S8). Variousmethods may be applied to the pattern correction depending on thevalidation method of the PPC data validation process (S7).

For example, in the case of carrying out validation by CAD validation orsimulation validation in the PPC data validation process (S7), thepattern correction can be carried out according to the CAD validationresult and the simulation validation result of the PPC data validationprocess (S7). In this case, if a pattern whose process margin is notsatisfying the spec is found by the simulation validation, the patternpitch is increased or an auxiliary pattern is added to improve theprocess margin, thereby satisfying the spec.

Further, in the case of carrying out validation in the PPC datavalidation process (S7) according to the first critical patternextraction rule (causing line-breakage) or the second critical pattern(causing short-circuit) extracted by the foregoing TEG, the correctionis carried out with respect to a portion (critical pattern) satisfyingthe first critical pattern extraction rule (causing line-breakage) ofthe pattern data after the PPC process by satisfying the firstcorrection rule initially found in the extraction TEG (S2). Further, aportion satisfying the condition of the second critical pattern (causingshort-circuit) is corrected by satisfying the second correction ruleinitially found in the extraction TEG (S2).

Next, the user creates a mask according to the pattern data (S10).

Finally, the user carries out a wafer evaluation. More specifically, theuser exposes a resist formed on the entire plane of the wafer by anexposure device using the created mask, and develops the exposed resist.The user captures an image of resist pattern obtained by developmentusing a scanning electron microscope, and checks whether the resistpattern satisfies the process spec (including the process margin) withreference to the captured image.

The method of the present embodiment produces a mask processed by anappropriate and sufficient PPC process, and therefore the process spec(including the process margin) is achieved at the stage of waferevaluation (S11). The wafer evaluation (S11) is performed to confirm theeffect given by the present invention, more specifically, to checkwhether the process spec is satisfied. Therefore, the final waferevaluation (S11) may be omitted.

Note that, in the foregoing method, the step S3 and later steps(extraction and correction based on the critical pattern extractionfile, and subsequent PPC) need to be carried out for each LSI and eachlayer. Further, the design rule may be improved (DFM) based on thecritical pattern extraction file. In this case, the critical pattern isexcluded from the design rule in improvement of design rule, and thesteps S3 to S5 are not necessary.

Though the present embodiment explained a method which requires criticalpattern extraction (S4) and correction (S5) according to criticalpattern extraction rule based on the photo evaluation result before theprocess proximity effect correction (S6). However, as described, theextraction and correction of critical pattern according to a criticalpattern extraction rule based on photo evaluation result may be carriedout after the process proximity effect correction. Therefore, theextraction and correction of critical pattern according to a criticalpattern extraction rule based on wafer evaluation result may be carriedout after the process proximity effect correction.

With reference to Figures, the following explains a concrete example ofa mask pattern creation method according to the foregoing embodiment.Note that, the following explains an example using a positive typephotoresist. However, the method of the present embodiment can becarried out by the same manner using a negative type photoresist.

As a concrete example of mask pattern creation method according to theforegoing embodiment, this example shows a concrete example of PPCprocess (model base) in a 130 nm process of creating a flash MR layer (aprocess of forming a circuit pattern 130 nm in minimum line width.

(Conventional PPC Model Extraction TEG Mask Pattern)

FIG. 8 shows a concrete example of a conventional PPC model extractionTEG mask pattern. This is used for L/S (line and space) type layer (L/Spattern wire layer), and is constituted of a density dependencyevaluation pattern, a line width linearity evaluation pattern, aline-terminal butting pattern etc. The line-terminal butting pattern isa plurality of patterns with gaps in which a single or plural line endsof one of the patterns is opposed to a single or plural line ends ofanother pattern with a gap therebetween. FIG. 22 shows a concreteexample of line-terminal butting pattern.

Note that, the present invention is basically used for a L/S-type layer.The present invention is applicable to a gate such as an active later ora GP (Gate Poly) layer, or a diffusion layer, in addition to a metalwire layer of Cu or Al.

In the step of preparing the TEG mask pattern data in this example (stepS0), a critical pattern (a pattern which becomes critical in theprocessing step) is added to the conventional TEG mask pattern data soas to create TEG mask pattern data including a critical pattern. Thecritical pattern is a type of pattern having an insufficient processmargin. For this reason, the way of processing greatly affects the yieldof device. More specifically, the critical pattern requires severe checkfor line-breakage/short-circuit. FIG. 9( a) to FIG. 9( j) show concreteexamples of critical pattern (OPC critical pattern in this case).

Further, FIGS. 9( a), (c) and (g) show various H-type crosslinkingpatterns with crosslinking sections ranges from 0.08 to 0.085 μm in linewidth. Further, FIG. 9( j) shows a ring pattern whose line width is0.139 μm. Note that, the values of FIG. 9( a) to FIG. 9( j) are obtainedby extraction from a LSI layer.

A H-type photomask (denoted by a circle) in FIG. 10A(a) is one of theexamples of critical pattern. The solid white portion of FIG. 10A(a)indicates an opening of the photomask. In the H-type crosslinkingpattern shown in FIG. 10A(a), the light intensity of the crosslinkedportion is lower than the other parts, and therefore the crosslinkedportion of the exposed and developed resist tends to become narrower.FIG. 10A(b) is an image obtained by capturing an image of a circuitmaterial by a scanning electron microscope (SEM), which circuit materialhas been etched with a photoresist which was formed on a wafer using aphotomask including a H-type crosslinking pattern and was exposed anddeveloped thereafter. In this case, the film is depressed in thecrosslinked portion of the H-type crosslinking pattern in the exposedand developed photoresist, and therefore, though this is rare, a partialline-breakage is seen after the etching in some cases (see the exampleof FIG. 10A(b)).

FIGS. 10B(a) and FIG. 10B(b) show results of conventional lightintensity simulation with respect to a H-type crosslinking pattern shownin FIG. 10A(a). FIG. 10B(a) is a result on a best-focus state and FIG.10B(b) shows a result on +0.23 μm defocused condition. The three linesrespectively show, in order of outward to inward of the center line ofthe opening pattern of the photomask, an exposure amount (dose) greaterby 4.5% than the optimal exposure amount, the optimal exposure amount,and an exposure amount (dose) smaller by 4.5% than the optimal exposureamount. Between the best-focus state and the +0.23 μm defocusedcondition, there is no significant variation in exposure process margin(Exposure Latitude; “EL” hereinafter) with which the simulation resultfalls within the exposure spec. Further, in comparison between a stateunder a large exposure amount and a state under a small exposure amount,there is no significant variation in depth of focus (“DOF” hereinafter)which can maintain the simulation result within the exposure spec(photospec). The depth of focus shows a width of defocus which canmaintain the CD (critical dimension; micro line width) spec (μm isusually used as a unit). The exposure process margin shows an errorwidth (a ratio to the optimal exposure amount generally denoted by ± %)of exposure amount which can maintain the CD spec.

The size of crosslinked portion of the H-type crosslinking patternpredicted by some kind of simulation such as conventional lightintensity simulation (or a threshold model) tends to have a wider valuethan the actual size (corresponding to the resist top size) so as tomatch the resist bottom size. Though line-breakage occurs in thecrosslinked portion of the H-type crosslinking pattern in FIG. 10A(b),line-breakage does not occur in the crosslinked portion of the H-typecrosslinking pattern in the conventional light intensity simulationestimation result (FIG. 10B(a) and FIG. 10B(b)). Actually, the filmthickness is reduced in the resist top shape after the development, andline-breakage is likely to occur in the next etching process. Therefore,in the proximity effect correction by the conventional simulation, theactual size of the crosslinked portion of the exposed and developedresist in the H-type crosslinking pattern is not likely to sufficientlyclose to the design pattern (the design spec is not satisfied)regardless of focal depth or exposure amount.

FIG. 11( a) and FIG. 11( b) show L/W size dependency for the presentH-type crosslinking pattern. FIG. 12( a) to FIG. 12( c) show 2L/W sizedependency for the micro projection pattern. The vertical axes of theFIG. 11( a) and FIG. 11( b) each denote a simulation value of the linewidth W (w1) of the crosslinked portion after the photo in the H-typecrosslinking pattern (see H-type crosslinking pattern in FIG. 7( a)).The simulation value is expressed as a Sim CD (nm). These figures showthat if the width W of the crosslinked portion is too small, linebreakage occurs depending on the length L (l1).

With these evaluation results, it is necessary to satisfy, as anadditional rule for the h-type crosslinking pattern, “at least one ofthe conditions regarding the length l1 and width w1 of the crosslinkedportion (the first rectangular section): (1) l1≧280 nm−2×ES(l1 j) and(2) w1≧240 nm−2×ES(w1 j)” in the flash MR layer having a line width of130 nm. The results may be combined to the PPC process as an additionalrule of pattern dependency. The addition to the design rule will makethe future work far more efficient.

The following shows an examination result based on light intensitysimulation in a (micro)projection-type pattern often seen in a line-typelayer. This pattern is a kind of projection pattern shown in FIG. 6.FIG. 12( a) to FIG. 12( c) show L/W(l1/w1) dependency of the pattern.There is no great variation in DOF or EL, and this clears simulationcheck (within the photospec). The problem is not seen in the lightintensity simulation.

FIG. 23( a) shows a concrete example of data table which was referred inthe calculation of the foregoing condition (logic process Ml layer photocondition) regarding the size of crosslinked portion: satisfying atleast one of (1) l1≧280 nm−2×ES(l1 j) and (2) w1≧240 nm−2×ES(w1 j), forpreventing the H-type crosslinking pattern from being critical after thePPC. FIG. 23 (a) shows a combination (gray cells in the figure) of l1and w1 with which the photo evaluation (measurement data) resulted in adefect (problem), and a combination (broken-line cells in the figure) ofl1 and w1 with which the simulation result (simulation extraction data)and the photo evaluation resulted in defects, when the l1 is varied in arange of 160 to 400 nm and w1 is varied in a range of 180 to 300 nm forfour L1 values (180 nm, 288 nm, 400 nm, and 1000 nm). Further, in FIG.23( a), the solid white cells indicate l1 and w1 combinations with whichthe simulation result and the photo evaluation were both desirable(there were no problems). The cells with x are cells for which thesimulation result and the photo evaluation were omitted. Note that, inFIG. 23( a), “the simulation result” indicates a result of simulation inwhich the photo evaluation result of FIG. 23( a) is applied.

In FIG. 23( b), the solid line denotes a minimum W value which providesthe best photo evaluation result for the value L ranging from −100 nm to100 nm in the H-type crosslinking pattern and in the crank-type pattern,which result is found by an experiment. Further, the broken line denotesan approximation of this result in the from of a straight line.According to the result of FIG. 23( b), it is found that the photoevaluation result becomes NG on condition that:W<0.3679(nm)×L+108.5(nm)

FIG. 23( a) shows that, in the H-type crosslinking pattern, thesimulation result and the photo evaluation become desirable as long asthe condition of “meeting at least one of l1≧280 nm−2×ES(l1 j) andw1≧240 nm−2×ES(w1 j)” is satisfied, regardless of the L1 value (linewidth of the part excluding the crosslinked portion; size of the firstpolygon section along the longitudinal direction of the firstrectangular section).

This photo evaluation result of FIG. 23 shows that the 130 nm flash MRlayer needs to satisfy the condition of “meeting at least one of l1≧280nm−2×ES(l1 j) and w1≧240 nm−2×ES(w1 j)” as an additional rule for theH-type crosslinking pattern of FIG. 7( a). This result may be applied toa PPC process as an additional rule of pattern dependency. Further, byadding it to the design rule for the future manufacturing, the workefficiency will greatly improve.

Another similar critical pattern is a crank-type crosslinking pattern. Aconcrete example of the crank-type crosslinking pattern is shown in FIG.7( b). This pattern also tends to have a narrow crosslinked portion,that is, Also for this pattern, according to the photo evaluation resultnot shown in the figure, it was found that the condition of “meeting atleast one of l2≧280 nm−ES(l2 j) and w2≧240 nm−2×ES(w2 j), regarding thelength l2 and the width w2 of the crosslinked portion (secondrectangular section), needs to be met.

Another type of critical pattern is a micro projection pattern. Aconcrete example of the micro projection pattern is shown in FIG. 7( c).In this pattern, the line is narrow in the vicinity the middle of theprojection section, and therefore line-breakage may occur if the portioncontain a contact or the like. Also in this case, the conventionalsimulation check is not capable of the extraction. Also for thispattern, the TEG photo evaluation result not shown in the figure showsthat the 130 nm flash MR layer is required to satisfy the condition of“meeting at least one of l3≧280 nm−ES(l3 j) and w3≧240 nm−2×ES(w3 j)”,regarding the length l3 and the width w3 of the projection section.

Still another type of critical pattern is a ring pattern. A concreteexample of the ring pattern is shown in FIG. 7( d). In this type ofpattern, the corner section is narrowed (eg. a cross or a T-shapepattern), and the aperture space may be filled. Also in this case, theconventional simulation check is not capable of the extraction. Also forthis pattern, the TEG photo evaluation result not shown in the figureshows that the 130 nm flash MR layer is required to satisfy thecondition of “meeting at least one of l4≧280 nm−2×ES(l4 j) and w4≧240nm−2×ES(w4 j), regarding the length l4 and the width w4 of the ringportion.

A final example is a pectinate L/S pattern used for a type of criticalpattern for a short-check-type pattern. A concrete example of thepectinate L/S pattern is shown in FIG. 7( e). A pectinate L/S patternsimilar to this has been used for yield evaluation patterns of othercompanies. One of the examples can be found in Patent Document 9(Japanese PCT National Phase Unexamined Patent Publication “Tokuhyo2004-505433”).

After the TEG pattern evaluation is completed, the pattern is subjectedto PPC correction based on the critical pattern restriction. The PPCcorrection more specifically includes extraction of the criticalpattern, and a PPC process using rule base correction or a model base inwhich the correction lower limit value is restricted.

FIG. 13 shows a concrete example. In this example, after the PPC iscarried out without restriction of lower-limit value, a H-typecrosslinked portion (narrow portion), which is a critical region, isextracted, and correction is carried out by increasing the line width ofthe H-type crosslinked portion from 57 nm to 90 nm. In this example, thelower-limit value of the line width of the H-type crosslinked portion islimited to 90 nm in view of mask processing accuracy.

According to this method, the lower limit value in an arbitrary narrowline portion is found in accordance with the TEG extraction result, andcorrection of the critical pattern is carried out. In this process, theline width of the narrow line portion is increased to a lower limitvalue. Further, the correction amount (error) of the line width isoutputted as another layer (data of another layer) (output of anotherlayer error). Since the line width of the narrow line portion tends tobe larger than the target size by an amount corresponding to thisdifference, the security of this portion needs to be examined byvalidation. This is the reason why the correction amount (error) of linewidth is outputted as another layer.

In this manner, a line-breakage insecure portion or a short-circuitinsecure portion which cannot be found by the conventional simulationcheck can be extracted from the mask pattern data without carrying outwafer evaluation using an actual trial mask. The insecure portion can bethus corrected appropriately.

A reverse condition of the condition for extracting the critical pattern(extraction rule of critical pattern), in other words, a condition ofno-critical pattern may be added to the design rule. This greatlyincreases efficiency of the future process development. FIGS. 14 to 17show specific design rules of restriction condition of the criticalpattern in the 130 nm flash MR layer.

Note that, though this example is applied to a 130 nm process, thepresent invention is not limited to a 130 nm process, and is applicablealso to a 90 nm process, or a process of after 65 nm.

[Process Proximity Effect Correction of an Empirical Fitting Model]

The following explains an example of process proximity effect correctionmethod using an empirical fitting model which can be used in S6 of FIG.1B.

This correction method comprising (i) a first measurement step forcarrying out an exposure experiment for exposing and developing a resistusing an evaluation mask (TEG), and measuring a shape of the developedresist; (ii) a second measurement step for etching a circuit materialusing the developed resist and measuring a pattern size of the materialafter the etching; (iii) a calculation step for calculating a shape ofthe developed resist by a calculation formula based on evaluation maskpattern data; (iv) an fitting step for changing a parameter (such as acoefficient of a function) of the calculation formula based oncomparison between the resist shape measured by the measurement step andthe resist shape calculated in the calculation step so as to fit themodified calculation formula to a measurement result; and (v) aproximity effect correction step for calculating a resist shapeaccording to the calculation formula modified in the fitting step andcarrying out process proximity effect correction of mask pattern databased on the calculated resist shape, wherein the evaluation maskincludes a pattern which is assumed to be critical on the conventionalproximity effect correction.

An example of a calculation formula used for resist shape calculation inthe proximity effect correction step is the calculation formula ofnon-patent Document 4 (Toyo Koike and other authors “semiconductorelement design simulator”, Heisei Maruzen Co. Ltd. 1994/August, pp147-174).

FIG. 21 shows an example of a method in which a OPC calculation model(calculation formula for a projection optical image) is fitted to theexperiment data in the foregoing fitting step. The figure shows a OPCcalculation model and an fitting parameter. As shown in FIG. 21, thismethod uses an fitting function formula (1) including light intensitydistribution I(x) dependent on a position (length) X on a wafer, andresist characteristic distribution R(x) dependent on a position (length)X on a wafer, and etching characteristic Ei (x) dependent on a position(length) X on a wafer.

[Production Method of Semiconductor Integrated Circuit]

The present embodiment is also applicable to a semiconductor integratedcircuit production method. FIG. 19( b) shows a typical production method(CMOS process manufacturing flow) of a semiconductor integratedcircuit(LSI) using a CMOS process. The optical lithography processes 1to 6 shown in FIG. 19( b) carry out transfer (print) of a hole patternor a LSI wire pattern (not an actual LSI wire pattern but a lighttransmitting pattern or a light-proof pattern corresponding to a LSIwire pattern) from the mask to the resist on the wafer, so as to formthe LSI wire pattern and the hole pattern on the resist on a wafer. Thatis, in these steps, light from a light source is condensed by alight-condensing lens and passes through the photomask, and the light isfocused on the wafer as an image by a projector lens. A predeterminedregion of the resist on a wafer is exposed. Then, the resist isdeveloped and patterned. After that, a circuit material layer (eg. ametal layer made of Cu or Al) beneath the photoresist is etched usingthe photoresist as an etching mask, and the circuit material layer ispatterned. After the step of FIG. 19( b), cutting, packaging, andshipment are performed. Note that, FIG. 19( a) illustrates an opticallithography process 5 detailed in FIG. 19( b)

The CMOS layer structure and the production method shown in FIG. 19( a)and FIG. 19( b) are the same as those of publicly-known CMOS, andtherefore the explanation of them is omitted here. This CMOS layerstructure is disclosed in some publicly-known documents, such as FIGS. 1and 2 of page 2 of “ULSI process technology” Hisashi Hara, Baifukan Co.Ltd.

[Mask Pattern Creation System]

With reference to FIG. 20, the following explains a mask patterncreation system (mask pattern correction system, mask pattern validationsystem) for carrying out the mask pattern creation method of FIG. 1A andFIG. 1B.

As shown in FIG. 20, the mask pattern creation system includes anexposure device 1, a CD measurement device (measurement device) 2, aparameter extraction/fitting section 3, a DRC section 12, an inputsection 14, a data processing section 15, and a display section (displaydevice) 18.

The exposure device 1 and the CD measurement device 2 carry outevaluation (wafer evaluation) shown in S1 of FIG. 1B, such as photo oretching, when the critical pattern extraction TEG (mask) is transferredby the user to the exposure device 1.

More specifically, the exposure device 1 carries out exposure anddevelopment of the resist on a wafer using the critical patternextraction TEG as a mask when the critical pattern extraction TEG (mask)is transferred by the user to the exposure device 1. The exposure device1 may be realized by a KrF scanner or a ArF scanner, for example.

The CD measurement device 2 measures the size or shape of the exposedand developed resist pattern and a pattern size of the etched circuitmaterial, and outputs the measurement result to the parameterextraction/fitting section 3 as measurement data. The CD measurementdevice 2 is realized by a CD-SEM (scanning electron microscope) orlaser. Note that, the extraction TEG is created in advance by a maskcreation device 20 outside the system, based on the critical patternextraction TEG pattern data having been through pattern data processproximity effect correction (S1 of FIG. 1B). Further, the criticalpattern extraction TEG pattern data having been through the processproximity effect correction is created in advance by processing criticalpattern extraction TEG pattern data stored in a design data storagesection 13 through such as process proximity effect correction by thedata processing section 15. The processing of critical patternextraction TEG pattern data is basically the same as the processing (thedata processing until critical patterns are completely removed by thedesign rule) of design data (described later) except for the operationby the critical pattern extraction section 15 a and the critical patterncorrection section 15 b. The explanation is therefore omitted here.

The parameter extraction/fitting section 3 is the second control sectionrealized by a EWS (engineering work station), a PC (personal computer)or the like, and carries out data processing by reading out alithography simulator program from a lithography simulator programstorage section 4 and executing the program, or by reading out a CADtool program from a CAD tool program storage section 5 and executing theprogram. For this operation, a major function of the parameterextraction/fitting section 3 is to carry out simulation of criticalpattern extraction TEG pattern data stored in the design data storagesection 13. The lithography simulator program is used for checking theCD size or for estimating the process margin by parameter-basedsimulation. The system of FIG. 20 uses a simulation program for fittingof PPC parameters.

The parameter extraction/fitting section 3 includes a rule extractionsection (parameter condition determining section) 3 a, a parameterextraction section 3 b, and a fitting section 3 c.

The fitting section 3 c compares the actually measured data (data ofsize or shape) of critical pattern extraction TEG outputted from the CDmeasurement device 2 with a simulation result of the critical patternextraction TEG pattern data stored in the design data storage section13. According to this comparison, the fitting section 3 c carries outfitting of a plurality of parameters, in other words, changes theplurality of parameters (fit the simulation to the actual measurement)so that the simulation fits to the actual measurement. Further, thefitting section 3 c stores a number sequence constituted of the adjustedplural parameters as a PPC mode (simulation model improved by thefitting) or a PPC rule. By the simulation by the proximity effectcorrection section 15 c using the PPC model or the PPC rule, it ispossible to increase accuracy of simulation by the proximity effectcorrection section 15 c.

The parameter extraction section 3 b finds a reference parameter of PPCvalidation from the actually measured data of the critical patternextraction TEG, stores the parameter having been found in a PPCvalidation file, outputs the parameters to the PPC validation filestorage section 10, and stores the PPC validation file in the storagesection 10. The validation file is supplied to the PPC validationsection 15 d, so as to validate PPC data in the PPC validation section15 d.

The rule extraction section 3 a acquires a critical pattern extractionrule and a critical pattern correction rule based on the step S2 of FIG.1B, that is a wafer evaluation result (measurement data) by the CDmeasurement device 2. The rule extraction section 3 a stores theacquired critical pattern extraction rule and critical patterncorrection rule to the critical pattern extraction rule storage section7 and the critical pattern correction rule storage section 8,respectively. The rule extraction section 3 a carries out extraction ofa DFM rule based on a result (measurement data) of wafer evaluation bythe CD measurement device 2. The rule extraction section 3 a adds orreplace the extracted DFM rule to the design rule stored in the designrule storage section 6.

The input section 14 supplies design data stored in the design datastorage section 13 to the data processing section 15 in accordance withuser's instruction. The DRC and LVS regarding the LSI layout arecompleted at this time of storing the design data into the design datastorage section 13. That is, the layout data (design data) is stored inthe design data storage section 13 after it has been through a designrule check by a DRC section 12 and LVS by a LVS section (not shown). TheDRC section 12 carries out the design rule check based on the designrule stored in the design rule storage section 6.

The data processing section 15 carries out processing of the design datasupplied by the input section 14. The data processing section 15includes a critical pattern extraction section 15 a, a critical patterncorrection section (critical pattern correction section, correctionportion output section) 15 b, a proximity effect correction section 15c, a PPC validation section 15 d, and a layout correction section 15 e.

The critical pattern extraction section 15 a extracts a critical pattern(a pattern which becomes critical after process proximity effectcorrection) from the design data based on the step S3 of FIG. 1B, thatis, based on the critical pattern extraction rule stored in the criticalpattern extraction rule storage section 7.

The critical pattern correction section 15 b carries out correction ofthe critical pattern based on the steps S4 and S5 of FIG. 1B, that is,based on the critical pattern correction rule stored in the criticalpattern correction rule storage section 8, in the case where the designdata contains a critical pattern (a pattern which becomes critical afterprocess proximity effect correction). Further, the critical patterncorrection section 15 b serves to include information indicating thecorrection portion into the mask pattern data before outputting the maskpattern data to the display section 18 so that the information of thecorrected portion is displayed in the display section 18.

Note that, if a DFM rule for excluding the critical pattern is added tothe design rule newly or as a replacement, the critical pattern isremoved from the design pattern before it is supplied to the dataprocessing section 15 (at the time of design rule check by the DRCsection 12). In this case, the data processing section 15 directly sendsthe design data having been supplied to the data processing section 15to the proximity effect correction section 15 c without sending it tothe critical pattern extraction section 15 a and the critical patterncorrection section 15 b.

The proximity effect correction section 15 c carries out the step S6 ofFIG. 1B with respect to the design data. More specifically, theproximity effect correction section 15 c carries out simulation-basedprocess proximity effect correction using a PPC model stored in the PPCmodel storage section 9. The proximity effect correction section 15 c isrealized by reading out a PPC tool program from the storage section 16and executing the program by a computer (EWS or PC). Therefore, thestorage section 16 is a computer-readable storage medium storing aprogram (PPC tool program) for causing a computer to function as theproximity effect correction section 15 c.

The PPC validation section 15 d carries out the step S7 of FIG. 1B withrespect to the design data. More specifically, the PPC validationsection 15 d carries out validation of the PPC data based on the PPCvalidation file stored in the validation file storage section 10. ThePPC validation section 15 d causes the display section 18 to display thevalidation result and sends the validation result to the layoutcorrection section 15 e. The PPC validation section 15 d is realized byreading out a PPC validation tool program from the PPC validation toolprogram storage section 17 and executing the program by a computer (EWSor PC). Therefore, the PPC validation tool program storage section 17 isa computer-readable storage medium storing a program (PPC validationtool program) for causing a computer to function as the PPC validationsection 15 d.

The layout correction section 15 e carries out the steps S8 and S9 ofFIG. 1B. More specifically, the layout correction section 15 e causesthe display section 18 to display the corrected mask pattern data andsends the mask pattern data to the external mask creation device 20. Thelayout correction section 15 e is realized by reading out a layouteditor program from the layout editor program storage section 19 andexecuting the program by a computer (EWS or PC). Therefore, the layouteditor program storage section 19 is a computer-readable storage mediumstoring a program (layout editor program) for causing a computer tofunction as the layout correction section 15 e.

The corrected mask pattern data outputted to the external mask creationdevice 20 is then used for lithography. First of all, a mask is createdby the mask creation device 20 using the corrected mask pattern data(S10 of FIG. 1B). Next, the wafer (on which a resist is formed) isexposed and developed using the mask by the exposure device 1. Theexposed and developed resist is evaluated by the CD measurement device2. After that, the wafer thereon having the exposed and developedresist, and also the data thereof are sent to an etching device (notshown), and the layer (circuit material layer) beneath the resist isetched by the etching device. The size of the layer beneath the resisthaving been through the etching is also measured by the CD measurementdevice 2. As a result, a pattern, such as a LSI pattern, is formed.

Note that, the DFM database 11 includes such as a DFM rule extracted bythe parameter extraction/fitting section 3, and serves to construct adatabase. The DFM database 11 adopts a soft computing technology such asa neutral network or a fuzzy computer, which allows accumulation,development of the database, as well as efficient and rapid predictionor estimation.

Note that, in the flow of FIG. 1B, the steps S0 to S2, S4, and S8generally require user instruction or number input. Further, in the maskpattern creation system show in FIG. 20, user instruction or numberinput are generally required in the part of the step of determiningnecessity of correction of the critical pattern in the exposure device1, the CD measurement device 2, the rule extraction section 3 a, and thecritical pattern correction section 15 b, and in the part of the step ofdetermining necessity of correction in the layout correction section 15e. Further, the determination of necessity of correction in the step S4or S8 may be performed by a user, or by the critical pattern correctionsection 15 b or the layout correction section 15 e.

Note that, the mask pattern creation system shown in FIG. 20 does notnecessary have to be a system with components physically connected, butmay be a system with components connected via a network (a system theentire part of which is constructed on a network).

The system in FIG. 20 is used not only for the correction of a maskpattern used for manufacturing semiconductor elements or liquid crystaldisplay elements, but also for a mask pattern validation system. Whenused as a mask pattern validation system, the system shown in FIG. 20may omit the section regarding mask pattern correction, including thecritical pattern correction rule storage section 8, the storage section9, the critical pattern correction section 15 b, the proximity effectcorrection section 15 c, the layout correction section 15 e, the PPCtool program storage section 16, and the layout editor program storagesection 19.

As a comparative example, the following explains a conventionalvalidation system and validation method with reference to FIG. 18. FIG.18 is a block diagram showing a structure of a conventional mask patternvalidation system.

As shown in FIG. 18, the conventional mask pattern validation systemincludes an input section 101 for externally supplying measurement datato a control section 102 (described later); a control section 102 forcarrying out validation and extraction of a defect portion based on themeasurement data, the design data, PPC data or the like; a validationdatabase 103 for storing a PPC validation database used for validation;a CAD validation section 104 for carrying out CAD (Computer-AidedDesign) validation using a DRC (design rule check) file (realized by aCAD validation tool); a simulation section 105 for carrying outsimulation using a PPC model; a display section 106 for displaying adefect portion extracted by the control section 102; a design datastorage section 107 for storing design data used in the control section102; a storage section 108 for storing PPC data used in the controlsection 102; and an extraction result data storage section 109 forstoring data of a defect portion (extraction result data) extracted bythe control section 102.

Further, the control section 102 is realized by a EWS, a PC or the like.The control section 102 includes a data reading section 102 a forreading out measurement data, design data, and PPC data respectivelyfrom the input section 101, the design data storage section 107, and thedata storage section 108, and supplying them to a difference validationsection 102 b (described later); a difference validation section 102 bfor carrying out difference validation of the design data or the PPCdata using a validation result given by the CAD validation section 104or a PPC validation database in the validation database 103; asimulation validation section 102 c for carrying out simulationvalidation of the design data and the PPC data using a simulation resultgiven by the lithography-simulation section 105 and a PPC validationdatabase in the validation database 103; and a defect portion extractionsection 102 d for extracting a defect portion of the design data or thePPC data using validation results in the difference validation section102 b and the simulation validation section 102 c, including theinformation of the defect portion into a PPC validation database in thevalidation database 103, and displaying the information of the defectportion in the display section 106.

Note that, the blocks of the conventional validation system shown inFIG. 18, namely the validation database 103, the difference validationsection 102 b, the simulation validation section 102 c, the defectportion extraction section 102 d, and the extraction result data storagesection 109 have specs prior to the system of the present invention.More specifically, the validation database 103 is a predecessor of the(integrated) database (DFM database 11) of FIG. 20. The differencevalidation section 102 b is an old-fashioned validation method used inthe rule base OPC. The simulation validation section 102 c has astructure of a predecessor of the PPC validation section 15 d in thesystem of the present invention. Operations of the defect portionextraction section 102 d and the extraction result data storage section109 are based on conventional optical-image simulation. The accuracy ofthis simulation was not ensured.

As described, the present embodiment achieves the process spec(including process margin) after the PPC process, and therefore,correction of the design data of a mask after the microfabricationprocess, creation of a new mask, and another wafer evaluation for thenew mask can be omitted. This prevents wastes in cost and developmentperiod.

Finally, the respective blocks of the system shown in FIG. 20,particularly the parameter extraction/fitting section 3 or the dataprocessing section 15, may be constituted of a hardware logic, or may berealized by software with a CPU.

Specifically, the system includes, for example, a CPU (CentralProcessing Unit) for enforcing instructions of a control program forexecuting the respective functions; a ROM (Read Only Memory) for storingthe program; a RAM (Random Access Memory) for developing the program;and a storage device (storage medium) such as a memory for storing theprogram and the various data. Further, the objective of the presentinvention may also be achieved by reading out and executing by thecomputer (or, by CPU, MPU) the program code (execute form program,intermediate code program, source program) of the control program of thesystem for executing the respective functions, which is stored in aprogram medium readable by a computer, which medium is provided to thesystem.

Examples of the program medium include one fixedly holds the programcode, which can be (a) a tape system such as a magnetic tape, a cassettetape or the like, (b) a disk system which includes a magnetic disk suchas a floppy® disk, a hard disk or the like and an optical disk such as aCD-ROM, an MO, an MD, a DVD or the like, (c) a card system such as an ICcard (inclusive of a memory card), an optical card or the like, and (d)a semiconductor memory such as a mask ROM, an EPROM, an EEPROM, a flashROM.

Further, the system may be constituted to be connectable to acommunication network, so as to allow provision of the program code viaa communication network. The communication network is not particularlylimited, and it may be: the Internet, Intranet, Extranet, LAN, ISDN,VAN, CATV communication network, virtual private network,telecommunication network, mobile body communication network, satellitecommunication network etc. Further, a transmission medium forconstituting the communication network is not particularly limited, andit may be wired based, such as IEEE1394, USB, power-line carrier, cableTV line, telephone line, ADSL line, or radio based, such as infraredmedium such as IrDA, remote control, Bluetooth®, 802.11 radio, HDR,mobile phone network, satellite communication line, ground wave digitalnetwork. Note that, the present invention may be realized in the form ofa carrier wave, or a data signal line that realizes the program code byelectronic transmission.

The present embodiment is applicable to a validation method for designdata or mask data used in a microfabrication process for forming circuitpatterns of a LSI (large-scale integrated circuit), liquid crystaldevice, a MEMS (a lithography process, and etching process etc. forexposing a resist, developing the exposed resist, and etching a circuitmaterial using the developed resist as a mask). Based on this method,the present embodiment also provides a correction method for design dataor mask data, a yield estimation method for semiconductor integratedcircuit, and a method of improving design rule. Further, the presentembodiment is applicable to a validation system and a correction systemfor design data or mask data using the same. The present embodiment isstill further applicable to a mask production method and a semiconductorintegrated circuit production method using the correction method fordesign data or mask data.

The embodiments and concrete examples of implementation discussed in theforegoing detailed explanation serve solely to illustrate the technicaldetails, which should not be narrowly interpreted within the limits ofsuch embodiments and concrete examples, but rather may be applied inmany variations within the spirit of the present embodiment, providedsuch variations do not exceed the scope of the patent claims set forthbelow.

What claimed is:
 1. A correction method for design data or mask data,said method correcting design (layout) data or lithography mask data sothat a resulting lithography mask forms a desired size of circuitpattern through a microfabrication process, the method comprising thesteps of: (i) carrying out proximity effect correction at leastincluding etching proximity effect correction with respect to designdata or mask data; (ii) a first measurement step for exposing a resistusing an evaluation mask including plural patterns varied in parametervalue, a part of which is a critical pattern which becomes critical onprocess proximity effect correction, developing the resist exposed, andmeasuring a pattern size of the resist developed; (iii) a secondmeasurement step for etching a circuit material using the resist havingbeen developed, and measuring a pattern size of the circuit materialafter the etching; (iv) determining parameter numerical condition forpreventing the design data or the mask data from being critical onprocess proximity effect correction, based on the pattern size of theresist and the circuit material measured in the first and secondmeasurement steps; (v) extracting a pattern with a parameter notsatisfying the foregoing numerical condition from the design data or themask data as a critical pattern which becomes critical on processproximity effect correction; and (vi) correcting the design data or themask data so that the critical pattern extracted have a parametersatisfying the foregoing numerical condition.
 2. The correction methodfor design data or mask data as set forth in claim 1, wherein theevaluation mask includes, as the critical pattern, at least one of: (i)a H-type crosslinking pattern at least constituted of a firstrectangular section, and two first polygon sections between which thefirst rectangular section is caught, the two first polygon sectionsrespectively being in contact with two short-length sides of the firstrectangular section, two ends of the respective sides of the firstpolygon section in contact with the short-length sides of the firstrectangular section each extending outward the short-length sides of thefirst rectangular section; (ii) a crank-type rectangular pattern atleast constituted of a second rectangular section and two second polygonsections between which the second rectangular section is caught, oneside of the two second polygon sections being in contact with respectivetwo short-length sides of the second rectangular section, one end ofrespective sides of the second polygon sections in contact with theshort-length sides of the second rectangular section each extendingoutward the short-length sides of the second rectangular section, to beopposite to each other with respect to the second rectangular section;(iii) a projection pattern at least constituted of a rectangularprojection section and a polygon main body in contact with one ofshort-length sides of the projection section, two ends of side of thepolygon main body in contact with the short-length side of theprojection section each extending outward the short-length side of theprojection section; (iv) a ring pattern having a rectangular opening;and (v) a pectinate pattern constituted of a pair of opposed pectinatesections in which two comb-teeth of one of the pectinate sectionstherebetween have a comb-tooth of the other pectinate section.
 3. Thecorrection method for design data or mask data as set forth in claim 2,wherein the evaluation mask includes at least one kind of a patternselected from a group consisting of: (1) a plurality of H-shapecrosslinking patterns; (2) a plurality of crank-type crosslinkingpatterns; (3) a plurality of projection pattern; and (4) a plurality ofring patterns, in each of the H-shape crosslinking patterns, at leastone of values of L1, w1, l1, and w1 is varied within a range including aboundary value so that at least one of boundary values of L1, w1, l1,and w1 can be found as the numerical parameter condition, where L1expresses a size of the first polygon section along a longitudinaldirection of the first rectangular section, w1 expresses a size of thefirst polygon section along a width of the first rectangular section, l1expresses a length of the first rectangular section, and w1 expresses awidth of the first rectangular section, in each of the crank-typecrosslinking patterns, at least one of values of L2, W2, l2, and w2 isvaried in a range including a boundary value so that at least one ofboundary values of L2, W2, l2, and w2 can be found as the numericalparameter condition, where L2 expresses a size of the second polygonsection along a longitudinal direction of the second rectangularsection, W2 expresses a size of the second polygon section along a widthof the second rectangular section, l2 expresses a length of the secondrectangular section, and w2 expresses a width of the second rectangularsection, in each of the projection patterns, at least one of values ofL3, W3, l3, and w3 is varied in a range including a boundary value sothat at least one of boundary values of L3, W3, l3, and w3 can be foundas the numerical parameter condition, where L3 expresses a size of amain body of the projection section along the longitudinal direction, W3expresses a size of the main body along a width of the projectionsection, l3 expresses a length of the projection section, and w3expresses a width of the projection section, and in each of the ringpatterns, each of a width of a portion extending along a first directionof the ring portion and a width of a portion extending along a seconddirection of the ring portion orthogonal to the first direction isconstant, and at least one of values of L4, W4, l4, and w4 is varied ina range including a boundary value so that at least one of boundaryvalues of L4, W4, l4, and w4 can be found as the numerical parametercondition, where a long width l4 expresses the longer one of the widthof the portion extending along the first direction of the ring portionand the width of the portion extending along the second direction of thering portion orthogonal to the first direction, a short width w4expresses the shorter one of the width of the portion extending alongthe first direction of the ring portion and the width of the portionextending along the second direction of the ring portion orthogonal tothe first direction, L4 expresses a size of the opening along the longwidth, and W4 expresses a size of the opening along the short width. 4.The correction method for design data or mask data as set forth in claim2, wherein the numerical parameter condition includes at least one of:numerical line-width condition such that “a line-width is not less thana lower limit of the line-width” and numerical space condition such that“a space is not less than a lower limit of the space”, and the pluralityof patterns of the evaluation mask includes at least one of a patterngroup constituted of patterns of varied line-widths in a numerical rangeincluding the lower limit of the line-width and a pattern groupconstituted of patterns of varied spaces in a numerical range includingthe lower limit of the space.
 5. The correction method for design dataor mask data as set forth in claim 1 wherein, at or after the step (1),the design data or the mask data having been through the processproximity effect correction are corrected so as to satisfy at least oneof: numerical line-width condition such that “a line-width is not lessthan a lower limit of the line-width” and numerical space condition suchthat “a space is not less than a lower limit of the space”.
 6. Thecorrection method for design data or mask data as set forth in claim 1wherein, before the step (1), the design data or the mask data havingbeen through the process proximity effect correction are corrected so asto satisfy at least one of: numerical line-width condition such that “aline-width is not less than a lower limit of the line-width” andnumerical space condition such that “a space is not less than a lowerlimit of the space”.
 7. A lithography mask production method comprisingthe steps of: correcting design data and lithography mask data accordingto steps (i), (ii), (iii), (iv), (v) and (vi) as set forth in claim 1;and creating a lithography mask according to the design data or the maskdata having been corrected.
 8. A semiconductor integrated circuitproduction method comprising the steps of: correcting design data orlithography mask data by performing the steps (i), (ii), (iii), (iv),(v) and (vi) as set forth in claim 1; creating a lithography maskaccording to the design data or the mask data having been corrected;forming a circuit material layer for constructing a circuit; forming aresist on the circuit material layer; exposing the resist using thelithography mask; developing the resist exposed; and etching the circuitmaterial layer using a mask resulted from development of the resist. 9.A validation method for design data or mask data for carrying outvalidation as to whether the design data or the mask data includes acritical pattern, which becomes critical on process proximity effectcorrection, in a microfabrication process for carrying out processproximity effect correction at least including etching proximity effectcorrection with respect to design (layout) data or data of a lithographymask, said validation being performed before and after the processproximity effect correction, the method comprising the steps of: (i) afirst measurement step for exposing a resist using an evaluation maskincluding plural patterns varied in parameter value, a part of which isa critical pattern which becomes critical when the design data or themask data is subjected to process proximity effect correction,developing the resist exposed, and measuring a pattern size of theresist developed; (ii) a second measurement step for etching a circuitmaterial using the resist having been developed, and measuring a patternsize of the circuit material after the etching; (iii) determiningparameter numerical condition for preventing the pattern data from beingcritical when the design data or the mask data is subjected to processproximity effect correction, based on the pattern size of the resist andthe circuit material measured in the first and second measurement steps;and (iv) extracting a pattern with a parameter not satisfying theforegoing numerical condition from the design data or the mask data as acritical pattern which becomes critical on process proximity effectcorrection.
 10. A method of estimating a yield of a semiconductorintegrated circuit in a manufacturing method for a semiconductorintegrated circuit by a microfabrication process including a proximityeffect correction step for carrying out process proximity effectcorrection with respect to design (layout) data or lithography maskdata, the method comprising the steps of: extracting a critical patternusing the steps (i), (ii), (iii) and (iv) as set forth in claim 9; andestimating a yield of a semiconductor integrated circuit based on atleast one of: (a) whether or not a critical pattern is extracted, (b)density of the extracted critical pattern, (c) a degree of error of aparameter of the extracted critical pattern with respect to a boundaryvalue of the foregoing parameter numerical condition.
 11. The method ofestimating a yield of a semiconductor integrated circuit as set forth inclaim 10, further comprising the steps of: extracting a circuit criticalpath by circuit simulation including timing validation from design dataof the semiconductor integrated circuit; and estimating a yield of thesemiconductor integrated circuit based on at least one of: (a) whetheror not a critical pattern is extracted, (b) density of the extractedcritical pattern, (c) a degree of error of a parameter of the extractedcritical pattern with respect to a boundary value of the foregoingparameter numerical condition, for a mask pattern corresponding to anarbitrary mask pattern including a part or an entire of a critical pathhaving been extracted.
 12. A method of improving a design rule in amicrofabrication process which includes the steps of laying out apattern of a semiconductor integrated circuit according to a designrule; and carrying out process proximity effect correction with respectto design data or mask data of a semiconductor integrated circuit havingbeen designed, the method comprising the steps of: extracting a criticalpattern using the steps (i), (ii), (iii) and (iv) as set forth in claim9; and when a critical pattern is extracted, including a rule “satisfythe numerical parameter condition” into the design rule.
 13. A systemfor correcting design data or mask data for correcting design (layout)data or lithography mask data so that a resulting lithography mask formsa desired size of circuit pattern through a microfabrication process,the system comprising: a proximity effect correction section forcarrying out proximity effect correction with respect to the design dataor the lithography mask data; an exposure device for exposing a resistusing a evaluation mask and developing the resist exposed; a firstmeasurement device for measuring a pattern size of the resist developed;a second measurement device for measuring a pattern size of a circuitmaterial having been etched using the resist developed; a parameternumerical condition determining section for determining parameternumerical condition based on the pattern sizes of the resist and thecircuit material measured by the first and second measurement devices soas to prevent the design data or the mask data from being critical onprocess proximity effect correction; a critical pattern extractionsection for extracting a pattern with a parameter not satisfying theforegoing numerical condition from the design data or the lithographymask data as a critical pattern which becomes critical on processproximity effect correction; and a critical pattern correction sectionfor correcting the design data or the mask data so that the criticalpattern extracted have a parameter satisfying the foregoing numericalcondition, wherein the evaluation mask is created in advance accordingto an evaluation mask including plural patterns varied in parametervalue, a part of which is a critical pattern which becomes critical onprocess proximity effect correction.
 14. The correction system fordesign data or mask data as set forth in claim 13 further comprising acorrection portion output section for adding, to the design data or thelithography mask data, information of a portion corrected by thecritical pattern correction section and outputting resulting lithographymask pattern data to a display device.
 15. A correction program storedin a computer readable medium for causing a computer to function as themask pattern data correction system as set forth in claim 13 so that thecomputer serves as the respective sections of the mask pattern datacorrection system.
 16. A computer-readable storage medium storing thecorrection program as set forth in claim
 15. 17. A validation system fordesign data or mask data, for carrying out validation as to whetherdesign (layout) data or lithography mask data includes a criticalpattern which becomes critical on process proximity effect correction,in a microfabrication process including a proximity effect correctionstep for carrying out process proximity effect correction with respectto the design data or the lithography mask data at least includingetching proximity effect correction, the validation being carried outbefore or after the proximity effect correction step, the systemcomprising: a proximity effect correction section for carrying outproximity effect correction with respect to the design data or thelithography mask data; an exposure device for exposing a resist using aevaluation mask and developing the resist exposed; a first measurementdevice for measuring a pattern size of the resist developed; a secondmeasurement device for measuring a pattern size of a circuit materialhaving been etched using the resist developed; a parameter numericalcondition determining section for determining parameter numericalcondition based on the pattern sizes of the resist and the circuitmaterial measured by the first and second measurement devices so as toprevent the design data or the mask data from being critical on processproximity effect correction; and a critical pattern extraction sectionfor extracting a pattern with a parameter not satisfying the foregoingnumerical condition from the design data or the lithography mask data asa critical pattern which becomes critical on process proximity effectcorrection, wherein the evaluation mask is created in advance accordingto evaluation mask pattern data including plural patterns varied inparameter value, a part of which is a critical pattern which becomescritical on process proximity effect correction.
 18. A validationprogram stored in a computer readable medium for causing a computer tofunction as the mask pattern data validation system as set forth inclaim 17 so that the computer serves as the respective sections of themask pattern data validation system.
 19. A computer-readable storagemedium storing the correction program as set forth in claim
 18. 20. Acorrection method for design data or mask data comprising the steps of:(i) a first measurement step for carrying out an exposure experiment forexposing and developing a resist using an evaluation mask, and measuringa shape of the resist developed; (ii) a second measurement step foretching a circuit material using the resist developed and measuring apattern size of the circuit material after the etching; (iii) a firstestimation step for estimating a shape of the resist developed accordingto data of the evaluation mask by a calculation formula or bysimulation; (iv) a second estimation step for estimating a shape of thecircuit material etched according to data of the evaluation mask by acalculation formula or by simulation; (v) an fitting step for changing aparameter of the calculation formula or a parameter for the simulationbased on comparison between the shapes of the resist and the circuitmaterial measured by the first and second measurement steps and theshapes of the resist and the circuit material calculated in the firstand second estimation steps so as to fit the calculation formula or thesimulation to measurement results of the first and second measurementsteps; and (vi) a proximity effect correction step for carrying outanother estimation of a shape of the resist and a shape of the circuitmaterial according to the calculation formula or the simulation havingbeen modified in the step (v) and carrying out process proximity effectcorrection of the design (layout) data or the mask data based on theshape of the resist and the shape of the circuit material estimated insaid another estimation, wherein the evaluation mask includes a patternwhich is assumed to be critical on the process proximity effectcorrection based on the shape of the resist and the shape of the circuitmaterial having been estimated in the steps (iii) and (iv).